Fusible Switch for Battery Control with Reversible Semiconductor Operation

The patent replaces mechanical contact switches with semiconductor-based switches (MOSFETs or IGBTs) to eliminate the on resistance problem inherent in mechanical contacts. The semiconductor switches provide the same bypassing function without the contact resistance that causes power consumption and heat generation, directly resolving the contradiction between reliability and energy efficiency.

The patent substitutes mechanical contact switches with semiconductor switches that do not rely on physical contact between conductors. This eliminates the contact resistance that generates heat, thereby maintaining the switching function while preventing excessive heat generation during battery cell bypassing operations.

The patent replaces mechanical contact-based switching with semiconductor-based switching, eliminating the need to increase contact area or contact pressure to reduce contact resistance. The semiconductor switches achieve low on resistance through their inherent electrical properties rather than mechanical contact, thereby avoiding the weight and volume penalties associated with enlarged mechanical contacts.

The patent replaces mechanical contact switches with semiconductor switches capable of handling large currents. The semiconductor switches maintain the high current handling capacity while eliminating the on resistance losses that cause excessive power consumption, enabling efficient operation under high load conditions typical in battery management systems.