Ga2O3 P-N Junction Diode Structure for Low Leakage and Low Turn-On
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Solution Overview
Problem
Conventional pn junction diodes with buried p-type semiconductor layers in trenches have complex structures and require intricate production processes, making it difficult to achieve both low turn-on voltage and leakage current suppression.
Innovation Solution
A pn junction diode with a simple structure comprising an n-type semiconductor layer of Ga2O3-based single crystal and a p-type semiconductor layer of Cu2O, NiO, Ag2O, or Si, where the turn-on voltage is maintained at or below 1.2V by optimizing the electron affinity and work function conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If p-type semiconductor layers are buried in trenches to suppress leakage current, then leakage current is suppressed, but device structure becomes complicated and manufacturing complexity increases
Solution Approach 1:
The invention extracts the p-type semiconductor layer from the complex trench structure and places it directly on the n-type semiconductor layer surface, eliminating the need for trench formation while maintaining the pn junction's leakage current suppression capability
Solution Approach 2:
Instead of burying the p-type layer in trenches as in conventional JBS diodes, the invention inverts the approach by forming a simple stacked structure where the p-type layer is deposited directly on the n-type layer, achieving both low turn-on voltage and leakage suppression
2Power
If conventional Schottky barrier diode structure is used, then turn-on voltage is low, but leakage current occurs due to tunnelling phenomenon
Solution Approach 1:
The invention uses a composite structure combining n-type Ga2O3 semiconductor layer with p-type semiconductor layer (NiO, Cu2O, Ag2O, or Si), creating a pn heterojunction that combines the low turn-on voltage advantage of Schottky diodes with the leakage suppression capability of pn junctions
3Power
If pn heterojunction is formed with NiO to achieve low turn-on voltage, then turn-on voltage is reduced, but manufacturing complexity increases due to material selection constraints
Solution Approach 1:
The invention expands the material selection for p-type semiconductor layers beyond just NiO to include Cu2O, Ag2O, and Si, providing multiple options that can be selected based on manufacturing capabilities and performance requirements, thereby simplifying the manufacturing process while maintaining low turn-on voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a pn junction diode to achieve low turn-on voltage and suppress leakage current with a simplified structure, facilitating the manufacture of power converter circuits with low power loss and high reliability.
Implementation Method 1
have a problem that leakage current may occur due to the tunnelling phenomenon at the Schottky junction interface
Implementation Method 2
electron affinity χp and work function φp of the p-type semiconductor and electron affinity χn and work function pn of the n-type semiconductor satisfy a condition expressed by a formula 0 eV≤χn−χp+φp−φn≤1.2 eV
Data Source
AI summary
A semiconductor substrate includes at least one main surface as a crystal growth base surface, and a gallium oxide-based semiconductor single crystal. The growth base surface is a (001) plane. An off angle in a [010] direction in a continuous region of not less than 70 area % of the growth base surface is in a range of more than −0.3° and not more than −0.01°, or in a range of not less than 0.01° and less than 0.3°. An off angle in a [001] direction in the region of the growth base surface is in a range of not less than −1° and not more than 1°. The semiconductor substrate has a diameter of not less than 2 inches.