Ga2O3 Power Devices on High Thermal Conductivity Substrates
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Solution Overview
Problem
Gallium oxide (Ga2O3) based power devices face challenges in achieving full performance due to poor thermal conductivity, leading to self-heating issues, which conventional heat dissipation methods only partially address.
Innovation Solution
The implementation of a substrate with high thermal conductivity, such as SiC, to act as a heatsink for Ga2O3 devices, allowing for flip-chip mounting and thermal connection to effectively remove heat generated by non-native devices, thereby integrating high-performance power conversion and RF capabilities while minimizing electrical parasitic losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If Ga2O3 devices are used for high-efficiency power conversion, then switching performance is improved, but thermal conductivity deteriorates leading to self-heating
Solution Approach 1:
The patent combines Ga2O3 power conversion devices with a high thermal conductivity substrate (such as diamond or SiC) to create an integrated structure. This merging allows the Ga2O3 layer to maintain its superior switching performance while the substrate provides efficient heat dissipation pathways, resolving the self-heating issue without sacrificing productivity.
Solution Approach 2:
The invention uses a composite structure consisting of Ga2O3 material combined with a high thermal conductivity substrate material. This composite approach leverages the electrical properties of Ga2O3 for power conversion while utilizing the thermal properties of the substrate for heat management, effectively addressing both the performance and thermal conductivity challenges.
2Loss of energy
If conventional heat dissipation methods are used for Ga2O3 devices, then some heat is removed, but thermal management is insufficient due to poor thermal conductivity
Solution Approach 1:
The high thermal conductivity substrate acts as an intermediary between the Ga2O3 device and the heat sink. This intermediary material with superior thermal properties facilitates efficient heat transfer from the Ga2O3 layer to the external environment, significantly improving thermal management and system reliability compared to conventional direct heat dissipation methods.
3Temperature
If Ga2O3 chips are mounted to external heatsinks, then heat dissipation is achieved, but integration level decreases and electrical parasitic losses increase
Solution Approach 1:
The patent merges the heat dissipation function directly into the device substrate, eliminating the need for separate external heatsink mounting. This integration reduces the number of components and interconnections, thereby lowering electrical parasitic losses while maintaining effective heat dissipation through the high thermal conductivity substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient heat dissipation, allowing Ga2O3 devices to operate at higher performance levels, potentially switching 50 to 100 times faster than state-of-the-art devices, and reduces system size by eliminating off-chip power conversion steps, while maintaining low electrical losses.
Implementation Method 1
The non-native device is also thermally connected to the first substrate such that heat generated by the non-native device is removed through the first substrate
Data Source
AI summary
An integrated circuit is provided including a first substrate with a first thermal conductivity. An active layer is deposited on the first substrate. At least one native device is fabricated on the active layer. A window is formed in the active layer, which exposes a portion of the first substrate. A non-native device is fabricated on a second substrate with a second thermal conductivity lower than the first thermal conductivity. The non-native device is flip-chip mounted in the widow on the first substrate and electrically connected to the at least one native device. The non-native device is also thermally connected to the first substrate such that heat generated by the non-native device is removed through the first substrate.