Ga2O3 Schottky Diode Anode Materials for Lower Turn-On Voltage
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Solution Overview
Problem
Schottky barrier diodes with Ga2O3-based semiconductor layers require a lower turn-on voltage to minimize forward loss, which is not achievable with existing designs.
Innovation Solution
A Schottky barrier diode is designed using a Ga2O3-based single crystal semiconductor layer with an anode electrode made of Mo or W, and a trench MOS structure with insulating films to achieve a turn-on voltage between 0.3V and 0.5V, and 0.4V to 0.6V respectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional Schottky barrier diode structures with Ga2O3-based semiconductor layers are used, then the diode achieves basic rectifying functionality, but the turn-on voltage remains too high (above 0.5V) resulting in excessive forward loss
Solution Approach 1:
The patent applies parameter changes by systematically varying the Schottky electrode material composition and structure. Specifically, it uses alloy electrodes with controlled ratios of Group 18 metals (Pt, Pd, Au) and Group 6 metals (Mo, W) to optimize the Schottky barrier height and turn-on voltage characteristics, achieving lower forward voltage drop while maintaining rectifying functionality
Solution Approach 2:
The patent employs composite materials by creating Schottky electrodes as alloys combining Group 18 metals (Pt, Pd, Au) with Group 6 metals (Mo, W). This composite structure enables simultaneous optimization of electrical properties (lower turn-on voltage) and mechanical properties (adequate melting point), resolving the contradiction between energy loss reduction and device reliability
2Loss of energy
If the Schottky electrode material is changed to achieve lower turn-on voltage, then forward loss is reduced, but the melting point of the electrode material may be insufficient
Solution Approach 1:
The patent resolves this contradiction by creating composite Schottky electrodes that combine Group 18 metals (which provide low work function and low turn-on voltage) with Group 6 metals (which provide high melting point). The synergistic combination enables the electrode to simultaneously achieve low forward voltage drop and sufficient thermal stability
Solution Approach 2:
The patent applies local quality by assigning different functional roles to different metal components within the Schottky electrode alloy. The Group 18 metal component locally provides the electron emission characteristics needed for low turn-on voltage, while the Group 6 metal component locally provides the structural stability and high melting point required for device reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the turn-on voltage of Ga2O3-based Schottky barrier diodes, enhancing their performance by lowering forward loss and increasing withstand voltage while maintaining good rectifying properties.
Implementation Method 1
an anode electrode that forms a Schottky junction with the semiconductor layer
Data Source
AI summary
A Schottky barrier diode includes a semiconductor layer including a Ga2O3-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.