Ga2O3 Super Junction IGBT Structure for Breakdown Voltage
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Solution Overview
Problem
Existing Ga2O3 power devices suffer from uneven electric field distribution leading to local peak fields, reducing breakdown voltage and reliability.
Innovation Solution
A semiconductor device with a super junction configuration and insulated gate bipolar transistor (IGBT) structure is applied to Ga2O3 power devices, incorporating doped pillars and isolation structures to enhance electric field distribution and reduce on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a traditional Ga2O3 power device structure is used, then the device can be manufactured with simple process, but the electric field distribution is uneven leading to local peak fields and reduced breakdown voltage
Solution Approach 1:
The drift layer is segmented into multiple regions by forming alternating first doped regions and second doped regions in a super junction configuration. This segmentation creates multiple isolated doped pillars that collectively improve electric field distribution across the device, preventing local peak fields and enhancing breakdown voltage.
Solution Approach 2:
Different doped regions are created with specific doping types and concentrations tailored to local requirements. The first doped regions and second doped regions have different electrical properties, allowing optimization of electric field distribution in different areas of the device to maximize breakdown voltage.
2Reliability
If the drift layer thickness is increased to achieve high breakdown voltage, then the blocking capability is improved, but the on-resistance increases
Solution Approach 1:
The super junction configuration changes the electrical parameters of the drift layer by introducing alternating doped regions. This allows the drift layer to achieve both high voltage blocking capability and low on-resistance simultaneously, breaking through the traditional trade-off between breakdown voltage and on-resistance in power devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves low on-resistance, high breakdown voltage, and improved reliability by maximizing electric field distribution and reducing power consumption.
Implementation Method 1
uneven electric field distribution leads to a local peak field, thereby reducing the breakdown voltage and the reliability of the device
Implementation Method 2
implement low on-resistance, high cut-off voltage, and high breakdown voltage
Data Source
AI summary
A semiconductor device includes a substrate and units. Each unit includes a drift layer, a fin, a first, second, and third doped region, and a first gate structure. The drift layer is located on a first surface of the substrate. The fin is located on a first surface of the drift layer. The first doped region is located in the fin and extends from a top surface of the fin toward the drift layer. The second doped region is located in the substrate and extends from a second surface of the substrate toward the first surface of the substrate. The third doped region is located in the drift layer and extends from the first surface of the drift layer toward a second surface of the drift layer. The first gate structure is between the first and third doped regions and extends to the first surface of the drift layer.