GAA Antifuse OTP Memory Cell for Secure PUF Random Codes
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Solution Overview
Problem
Current one-time programming (OTP) memory cells for physically unclonable function (PUF) technology face challenges in securely generating unique random codes due to manufacturing variations, which are difficult to replicate, but existing solutions lack efficient mechanisms for reliable data protection and secure data storage.
Innovation Solution
The development of an antifuse-type OTP memory cell utilizing a gate-all-around (GAA) transistor with nanowires and specific gate dielectric layers, where quantum-tunneling occurs to generate unique programming states, enabling secure data storage and protection through process variation-induced randomness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional OTP memory cells are used for PUF technology, then manufacturing variation can generate random codes, but data protection and security reliability are insufficient
Solution Approach 1:
The patent changes the physical parameters of the memory cell by introducing gate-all-around nanowire transistors with specific gate dielectric layers (first and second gate dielectric layers with different breakdown characteristics). This structural parameter change enables more reliable quantum tunneling effects for secure data protection while maintaining manufacturability through standard semiconductor processes.
Solution Approach 2:
The patent employs composite material structures by combining multiple gate dielectric layers with different properties around the nanowire channels. This composite approach enhances the reliability of quantum tunneling for security applications while the layered structure can be integrated into existing manufacturing workflows.
2Reliability
If gate-all-around nanowire transistor structure is implemented, then quantum tunneling enables secure random code generation, but device structure complexity increases
Solution Approach 1:
The patent segments the gate structure into multiple components: first gate dielectric layer, second gate dielectric layer, and gate electrodes positioned at different locations. This segmentation enables controlled quantum tunneling paths while the modular structure can be fabricated using standard multi-step semiconductor processes, managing complexity through systematic division.
Solution Approach 2:
The patent transitions from planar gate structures to three-dimensional gate-all-around configurations where gate electrodes surround the nanowire channels in multiple dimensions. This dimensional change enables superior electrostatic control and quantum tunneling effects, with the added benefit that the GAA structure can be integrated into existing CMOS fabrication sequences.
3Reliability
If antifuse control mechanism is added, then data protection capability is enhanced, but memory cell structure becomes more complex
Solution Approach 1:
The gate-all-around nanowire transistor structure serves multiple functions: it acts as the primary switching element, provides quantum tunneling for antifuse control, and enables random code generation through manufacturing variations. This multi-functionality enhances data protection capability while avoiding the need for separate dedicated structures, thereby managing overall device complexity.
Solution Approach 2:
The quantum tunneling effect in the gate dielectric layers occurs automatically based on applied voltages and manufacturing variations, providing self-service antifuse control without requiring additional external control circuits. This self-service mechanism enhances security while minimizing added structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The antifuse-type OTP memory cell effectively generates secure, unique random codes by leveraging process variations, enhancing data protection and security in semiconductor chips, particularly in high-security applications.
Implementation Method 1
where quantum-tunneling occurs to generate unique programming states
Data Source
AI summary
An antifuse-type OTP memory cell at least includes a first nanowire, a second nanowire, a first gate structure, a first drain/source structure and a second drain/source structure. The first gate structure includes a first gate dielectric layer, a second gate dielectric layer and a first gate layer. The first nanowire is surrounded by the first gate dielectric layer. The second nanowire is surrounded by the second gate dielectric layer. The first gate dielectric layer and the second gate dielectric layer are surrounded by the first gate layer. The first drain/source structure is electrically contacted with a first terminal of the first nanowire and a first terminal of the second nanowire. The second drain/source structure is electrically contacted with a second terminal of the first nanowire. The second drain/source structure is not electrically contacted with a second terminal of the second nanowire.