3D GAA Capacitor Structure for Low-Resistance Memory Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in scaling down dimensionally for advanced technology nodes, particularly in integrating three-dimensional device structures like FinFETs and GAA devices, and incorporating passive devices such as capacitors, while maintaining device density and reducing signal loss due to resistance issues.
Innovation Solution
The development of 3D GAA capacitance devices formed using semiconductor layers with patterned active fins, heavily doped channels, and conductive replacements, along with specific gate and interfacial layers to achieve lower resistance and increased capacitance, enabling efficient electrical connections and higher device density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional planar device structures are used, then manufacturing process is simpler, but device density decreases and signal loss increases
Solution Approach 1:
The patent transitions from conventional two-dimensional planar device structures to three-dimensional FinFET and GAA structures. This dimensional change enables increased device density by utilizing vertical space and surface area, allowing multiple channels to be stacked vertically while maintaining compact footprints. The FinFET structure creates a three-dimensional fin region that provides greater gate control and increased effective channel area compared to planar devices.
2Productivity
If device dimensions are scaled down, then production efficiency increases and costs decrease, but signal loss due to resistance increases
Solution Approach 1:
The patent modifies material parameters by introducing heavily doped semiconductor regions with optimized doping concentrations and profiles. The heavily doped channels and source/drain regions reduce resistivity through increased carrier concentration. The patent also optimizes geometric parameters of the FinFET structure, including fin width, height, and spacing, to balance resistance reduction with continued scaling benefits.
3Productivity
If three-dimensional device structures like FinFET and GAA are integrated, then device density increases, but manufacturing complexity increases
Solution Approach 1:
The patent divides the semiconductor structure into distinct functional segments including separate FinFET active regions, capacitor regions, and interconnect layers. The GAA structure is segmented into multiple nanosheet channels stacked vertically, each controlled by its own gate. This segmentation allows independent optimization and fabrication of different device components using specialized process modules.
Solution Approach 2:
The patent implements nested structures where gates wrap around channels in the GAA configuration, with multiple gates positioned at different heights along the vertical channel stack. The FinFET structure nests the gate electrode within a recess formed in the fin structure, providing three-dimensional gate control. This nesting approach maximizes the effective gate-channel interface area within a compact vertical footprint.
4Reliability
If heavily doped channels and conductive replacements are used, then resistance decreases and signal loss reduces, but manufacturing precision requirements increase
Solution Approach 1:
The patent performs preliminary doping actions during the epitaxial growth process to form heavily doped source/drain regions and channels before final device assembly. Ion implantation is performed at predetermined stages with pre-calculated dosages to achieve target doping concentrations. The preliminary formation of conductive paths through pre-doping reduces the need for subsequent high-precision adjustment steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances device density and design flexibility by reducing signal loss and delay, allowing for more complex and efficient semiconductor device integration in advanced technology nodes.
Implementation Method 1
a gate structure 200A, 200D over and between the channels 22A-22C, 26A-26C
Implementation Method 2
heavily doped channels 26A-26C
Data Source
AI summary
A device includes a substrate. A first nanostructure is over the substrate, and includes a semiconductor having a first resistance. A second nanostructure is over the substrate, is offset laterally from the first nanostructure, is at about the same height above the substrate as the first nanostructure, and includes a conductor having a second resistance lower than the first resistance. A first gate structure is over and wrapped around the first nanostructure, and a second gate structure is over and wrapped around the second nanostructure.