GAA Semiconductor Channel Doping for Higher On/Off Ratio
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Solution Overview
Problem
The electrical performance of Gate-All-Around (GAA) transistors in dynamic memory is limited due to consistent majority carrier concentrations in the doped regions, making it difficult to adjust these concentrations and improve the transistor's performance.
Innovation Solution
A semiconductor structure with a channel region doped with both first-type and second-type doped ions, where the concentration of majority carriers in the channel region is less than in the first and second doped regions, facilitating a higher on/off ratio and reducing threshold voltage and resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a doping process is used in GAA transistor structure, then the manufacturing process is simple, but the majority carrier concentrations in different regions cannot be adjusted independently
Solution Approach 1:
The channel structure is divided into multiple regions (first channel region, second channel region, third channel region) with different doping concentrations. Each region can be independently doped to achieve different carrier concentrations, allowing independent adjustment of electrical characteristics in different parts of the channel while maintaining a relatively simple manufacturing process.
Solution Approach 2:
Different regions of the channel are assigned different doping concentrations tailored to their specific functional requirements. The first channel region has a first doping concentration, the second channel region has a second doping concentration, and the third channel region has a third doping concentration, enabling localized optimization of carrier concentrations to improve overall transistor performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the electrical performance of GAA transistors by increasing the on/off ratio, reducing threshold voltage, and improving saturation current, while maintaining high carrier concentrations in the doped regions.
Implementation Method 1
diffusing the second-type doped ions into the channel region by an annealing process
Implementation Method 2
removing the sacrifice layer, to expose the sidewall of the channel region
Data Source
AI summary
Provided are a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a base; a bit line; and a semiconductor channel including a first doped region, a channel region, and a second doped region that are sequentially arranged, where the first doped region contacts the bit line, and the first doped region, the channel region, and the second doped region are doped with first-type doped ions. The channel region is further doped with second-type doped ions, enabling a concentration of majority carriers in the channel region to be less than a concentration of majority carriers in the first doped region and a concentration of majority carriers in the second doped region. The first-type doped ions are one of N-type ions or P-type ions, and the second-type doped ions are the other of N-type ions or P-type ions.