GAA Semiconductor Device Structure for Uniform Channel Control
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Solution Overview
Problem
The semiconductor manufacturing process faces challenges in achieving smaller and faster integrated circuits with increased complexity due to scaling down dimensions, requiring advancements in manufacturing processes and technology to support complex functions while maintaining low cost and low power consumption.
Innovation Solution
The use of gate all-around (GAA) transistor structures patterned through photolithography and self-aligned processes, combined with epitaxial growth of semiconductor layers with different compositions and selective etching techniques to form uniform channel regions, enabling precise control over device dimensions and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography and self-aligned processes are used to pattern GAA transistor structures, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent divides the transistor structure into multiple discrete semiconductor layers (first semiconductor layers and second semiconductor layers) arranged in alternating patterns. This segmentation allows each layer to be independently formed and controlled, achieving uniform channel regions while managing the complexity of the overall GAA structure through modular construction
Solution Approach 2:
The patent transitions from planar transistor structures to three-dimensional gate-all-around structures by stacking semiconductor layers vertically. This dimensional change enables all-around gate control of the channel, significantly improving manufacturing precision and device performance while the self-aligned processes manage the associated complexity
2Manufacturing precision
If epitaxial growth is used to form semiconductor layers with different compositions, then manufacturing precision is improved, but production time increases
Solution Approach 1:
The patent performs preliminary selective etching of sacrificial semiconductor layers before final epitaxial growth. This preliminary action creates prepared substrates with controlled compositions that serve as foundations for subsequent epitaxial layers, enabling precise composition control while reducing the total time required for multiple sequential growth steps
Solution Approach 2:
The patent utilizes changes in epitaxial growth parameters (temperature, pressure, gas flow rates, precursor ratios) to control the composition of different semiconductor layers. By precisely adjusting these parameters during growth, the patent achieves uniform channel regions with controlled material compositions, optimizing both precision and production efficiency
3Manufacturing precision
If selective etching techniques are used to form uniform channel regions, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The patent introduces sacrificial semiconductor layers as intermediary structures that facilitate selective etching. These sacrificial layers are strategically positioned and removed in controlled steps, enabling the formation of uniform channel regions between remaining semiconductor layers. The intermediary layers simplify the overall etching process by providing clear etch selectivity targets, reducing process complexity while achieving high precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the fabrication of high-performance semiconductor devices with improved uniformity and reliability, enhancing device performance and reducing variations in critical dimensions, thus supporting advanced semiconductor functions.
Implementation Method 1
gate all-around (GAA) transistor structures patterned through photolithography
Implementation Method 2
epitaxial growth of semiconductor layers with different compositions
Data Source
AI summary
A semiconductor device includes a substrate having a protrusion portion. A plurality of sheets are spaced apart from the protrusion portion in a first direction. A plurality of gate structures are spaced apart from each other in a second direction different from the first direction over the protrusion portion. A first inner spacer is between the sheets. An epitaxial structure is over the protrusion portion of the substrate, wherein the epitaxial structure comprises a first region over the protrusion portion of the substrate, a plurality of second regions spaced apart from each other over the first region and on side surfaces of the sheets, and a third region between the plurality of second regions, wherein the first, second, and third regions are sequentially disposed along the first direction, and the second and third regions are sequentially disposed along the second direction.