Multigate GAA Transistor Channel Configuration for Gate Control
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Solution Overview
Problem
Existing multigate devices, such as gate-all-around (GAA) devices, face challenges in integrating different channel configurations to achieve varying performance levels, particularly in terms of gate control and short-channel effects, which complicates IC manufacturing processes.
Innovation Solution
A method for fabricating multigate devices with varying channel configurations by forming GAA transistors on a substrate, where the number of channel regions can be adjusted to tailor performance, including p-type and n-type devices, using epitaxial growth and selective etching to create nanostructures with different channel configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multigate devices with different channel configurations are integrated to achieve varying performance levels, then gate control and short-channel effects are improved, but IC manufacturing process complexity increases
Solution Approach 1:
The substrate is divided into multiple regions, each containing devices with different channel configurations (e.g., different numbers of channel regions). This segmentation allows each region to be optimized for specific performance requirements while maintaining a systematic manufacturing approach across the entire substrate.
Solution Approach 2:
Different channel configurations are implemented in different regions of the substrate according to local performance requirements. For example, high-performance regions may have more channel regions while low-power regions have fewer channel regions, allowing each local area to have optimized characteristics for its intended application.
2Reliability
If multigate devices with different channel configurations are integrated to achieve varying performance levels, then gate control and short-channel effects are improved, but manufacturing process integration becomes more difficult
Solution Approach 1:
Region definitions and channel configuration specifications are established before the actual device fabrication begins. This preliminary planning includes defining which regions will have which channel configurations, allowing subsequent manufacturing steps to be executed systematically without requiring complex real-time adjustments.
Solution Approach 2:
A unified manufacturing process framework is developed that can handle multiple device types with different channel configurations using the same fundamental fabrication steps. This universal approach allows the manufacturing system to produce various device configurations through parameter adjustments rather than requiring entirely separate process lines.
3Productivity
If channel configurations are optimized for specific applications, then device performance is improved, but manufacturing flexibility is reduced
Solution Approach 1:
The manufacturing system is designed to dynamically adjust channel configuration parameters based on the intended application. By making the channel configuration a variable parameter that can be changed between production batches or even within different regions of the same substrate, the system maintains both optimization for specific applications and flexibility to adapt to different requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the production of IC devices with tailored performance characteristics, such as high-speed or low-power applications, by optimizing the number of channel regions and source/drain configurations, thereby improving gate control and reducing short-channel effects.
Implementation Method 1
using epitaxial growth and selective etching to create nanostructures with different channel configurations
Implementation Method 2
using epitaxial growth and selective etching to create nanostructures with different channel configurations
Data Source
AI summary
A first gate-all-around (GAA) transistor is formed on the first fin structure; the first GAA transistor has a channel region within a first plurality of nanostructures. A second GAA transistor is formed on the second fin structure; the second GAA transistor has a second channel region configuration. The second GAA transistor has a channel region within a second plurality of nanostructures. The second plurality of nanostructures is less than the first plurality of nanostructures.