Gate-All-Around Transistor Channel Stack for Higher Carrier Mobility
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Solution Overview
Problem
Conventional gate-all-around (GAA) transistors with silicon channels have low carrier mobility, limiting their operating performance.
Innovation Solution
The GAA transistor design incorporates a semiconductor channel material with high carrier mobility, and a nanostructure layer comprising a first material layer and second material layers with different materials, arranged along the thickness direction to enhance conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon channel material is used in conventional GAA transistors, then the manufacturing process is simple and compatible with existing techniques, but the carrier mobility is low which limits operating performance
Solution Approach 1:
The patent employs composite material structures in the channel region, combining silicon-based materials with high-carrier-mobility materials such as germanium or III-V族半导体材料. This composite approach enables the transistor to achieve high carrier mobility while maintaining compatibility with existing silicon-based manufacturing processes, thus resolving the contradiction between operating performance and manufacturing ease
Solution Approach 2:
The invention applies local quality enhancement by introducing high-carrier-mobility material specifically in the channel region where it is most needed for improving operating performance, while maintaining silicon-based materials in other regions for manufacturing compatibility. This localized material optimization allows selective improvement of carrier mobility without requiring complete process overhaul
2Reliability
If a single-material channel layer is used, then the structure is simple and manufacturing is easier, but the conductivity and carrier mobility are limited
Solution Approach 1:
The patent implements composite material stacks in the nanostructure layer, combining multiple semiconductor materials with different properties. The channel layer comprises a silicon-based layer combined with high-carrier-mobility material layers, creating a composite structure that enhances conductivity while managing the increased structural complexity through systematic material integration
Solution Approach 2:
The channel region is segmented into multiple functional layers with distinct material compositions - including silicon-based layers and high-carrier-mobility material layers - each performing specific functions. This segmentation allows optimization of conductivity in critical regions while maintaining overall structural manageability through clear functional division
Data Source
AI summary
A gate-all-around transistor and a method for manufacturing the same. The gate-all-around transistor comprises: a semiconductor substrate; a source, a drain, and at least one nanostructure layer, which are disposed on the semiconductor substrate; and a gate stack structure surrounding each nanostructure layer, where the at least one nanostructure layer is disposed between the source and the drain, each nanostructure layer comprises a first material layer and second material layers, the second material layers are disposed at two sides of the first material layer along a thickness direction of the first material layer, each of the first material layer and the second material layers is in contact with both the source and the drain, and at least a part of the second material layers is different from the first material layer in material.