GAA Semiconductor Structure With Variable Channel Thickness
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity, and existing methods struggle to achieve both high performance and efficiency in gate control and power management.
Innovation Solution
The semiconductor structure incorporates a gate-all-around (GAA) transistor design with multiple gate structures of varying widths and thicknesses, formed using advanced photolithography and self-aligned processes, to optimize gate-channel coupling and reduce short-channel effects, enabling coexistence of power efficiency and high-speed performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce short-channel effects, then gate-channel coupling and device performance are improved, but fabrication complexity increases
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate structure and second gate structure) with different widths and thicknesses, allowing each gate to be optimized independently for specific performance requirements while maintaining overall device functionality
Solution Approach 2:
Different regions of the device are assigned different gate configurations - the first gate structure with specific width and thickness for power efficiency, and the second gate structure with different dimensions for high-speed performance, enabling local optimization without compromising the entire device
2Productivity
If device dimensions are scaled down to improve production efficiency and lower costs, then productivity increases, but manufacturing process complexity increases
Solution Approach 1:
Semiconductor material layers are pre-formed with alternating patterns and specific thicknesses before gate structure formation, enabling subsequent self-aligned processing that simplifies the overall fabrication sequence despite miniaturization requirements
Solution Approach 2:
Multiple semiconductor material layers are stacked in an alternating pattern forming a nested structure, allowing compact vertical integration that achieves high functionality in a small footprint while maintaining manufacturability
3Adaptability or versatility
If gate structures with varying widths and thicknesses are formed to achieve both power efficiency and high-speed performance, then device performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The gate structures are designed with varying parameters (width and thickness) to achieve different performance characteristics - the first gate structure optimized for power efficiency and the second for high-speed operation, allowing performance adaptation without requiring extreme manufacturing precision
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first channel layers formed over a substrate along a first direction, and second channel layers adjacent to the first channel layers and over the substrate. The semiconductor structure includes a first gate structure formed over the first channel layers along a second direction. The semiconductor structure also includes a first gate spacer layer formed adjacent to the first gate structure, and a first thickness of the first channel layers directly below the first gate structure is smaller than a second thickness of the second channel layers directly below the first gate spacer layer