GAA Nanostructure Contacts With Dual-Material S/D Void Control
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and difficulty in achieving improved gate control, reduced OFF-state current, and minimized short-channel effects, which are essential for advancing semiconductor ICs and devices.
Innovation Solution
The implementation of gate-all-around (GAA) transistor structures with a specific semiconductor structure formation process involving multiple patterning and self-aligned processes, including the use of spacers, sacrificial layers, and epitaxial growth, to form nanostructures with a gate structure wrapping around them, and the formation of source/drain contact structures with different material portions to prevent diffusion and reduce voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce short-channel effects, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The contact structure is divided into multiple segments: a first contact structure formed over a first side of the S/D structure, and a second contact structure formed over a second side of the S/D structure. This segmentation allows each contact structure to be optimized independently, improving gate control while managing manufacturing complexity through modular fabrication approaches.
Solution Approach 2:
Different materials are used for the first and second contact structures based on their local requirements. The first contact structure uses a material selected from a first group of materials, while the second contact structure uses a material from a second group of materials. This local quality approach optimizes performance for each specific location while providing flexibility in the manufacturing process.
2Reliability
If contact structures are formed over both sides of S/D structure, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The contact structure is divided into multiple segments: a first contact structure formed over a first side of the S/D structure, and a second contact structure formed over a second side of the S/D structure. This segmentation allows each contact structure to be optimized independently, improving gate control while managing manufacturing complexity through modular fabrication approaches.
Solution Approach 2:
Instead of forming a single contact structure from one side, the approach forms contact structures from both sides of the S/D structure. This inverted approach of bilateral contact formation improves reliability by providing dual-sided access and control, while the systematic methodology manages the increased integration complexity.
3Reliability
If different materials are used for contact structures, then diffusion is prevented and reliability is improved, but manufacturing process complexity increases
Solution Approach 1:
Different materials are used for the first and second contact structures based on their local requirements. The first contact structure uses a material selected from a first group of materials, while the second contact structure uses a material from a second group of materials. This local quality approach optimizes performance for each specific location while providing flexibility in the manufacturing process.
Solution Approach 2:
The methodology introduces an intermediary approach by categorizing materials into groups and establishing selection criteria for each contact structure. This intermediary framework simplifies the manufacturing process by providing clear material selection guidelines, reducing the complexity that would otherwise arise from arbitrary material choices while maintaining the diffusion prevention benefits of different materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and performance of semiconductor structures by improving gate control, reducing leakage, and minimizing voids in the contact structures, thereby supporting the development of high-performance and low-power integrated circuits.
Implementation Method 1
a first plurality of semiconductor layers including first semiconductor material layers and second semiconductor material layers alternately stacked
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first nanostructures surrounded by a first gate structure, and a first source/drain (S/D) structure adjacent to the first gate structure. The semiconductor structure includes a first contact structure formed over a first side of the first S/D structure, and a second contact structure formed over a second side of the first S/D structure. The second contact structure includes a first portion and a second portion. The first portion and the second portion are made of different materials. The first S/D structure has a first width. The second portion has a second width. The first width is smaller than the second width.