GAA Dielectric Isolation Structure for Gate Electrode Separation
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, challenges arise in integrating electronic components efficiently while maintaining performance and reliability, particularly in the formation of gate-all-around (GAA) structures.
Innovation Solution
A method for manufacturing GAA semiconductor devices involves forming a multi-layer structure with alternating semiconductor layers, patterning fins and isolation regions, and creating gate stacks and spacers, followed by a wire-release process to form nanosheets and source/drain regions, using techniques like epitaxial growth, chemical vapor deposition, and etching to achieve precise feature sizes and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but manufacturing precision and structural integrity become more difficult to maintain
Solution Approach 1:
The patent segments the gate structure into multiple components: a mandrel, a first spacer formed around the mandrel, and a second spacer formed around the first spacer. This segmentation allows each component to be formed with controlled dimensions through separate deposition processes, enabling precise feature size control even as overall device dimensions are reduced to improve integration density.
Solution Approach 2:
The patent uses a mandrel as a preliminary structure that defines the position and dimensions of subsequent features. The first spacer is formed around the mandrel, and the second spacer is formed around the first spacer, creating a self-aligned structure. This preliminary action of forming the mandrel and spacers in sequence enables precise feature size control while allowing high integration density.
2Quantity of substance
If minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but structural integrity becomes compromised
Solution Approach 1:
The gate structure is segmented into a mandrel, first spacer, and second spacer, where each layer provides structural support. The spacers are formed with different materials and thicknesses, creating a multi-layered structure that maintains structural integrity even when the overall feature size is reduced for higher integration density.
Solution Approach 2:
The patent employs composite materials in the spacer structures, using different dielectric materials with different mechanical properties. This allows optimization of each layer for both dimensional control and structural strength, maintaining structural integrity while enabling reduced feature sizes for higher integration density.
3Reliability
If complex GAA structures are formed to improve device performance, then better electronic characteristics are achieved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The complex gate-all-around structure is segmented into discrete formation steps: mandrel formation, first spacer deposition, second spacer deposition, and mandrel removal. Each step is relatively simple and can be performed with standard semiconductor manufacturing equipment, reducing manufacturing difficulty while achieving the complex final structure needed for improved device performance.
Solution Approach 2:
The mandrel serves as a preliminary structure that simplifies the formation of the complex gate-all-around structure. By forming spacers around the mandrel in a self-aligned manner, the complex final structure is achieved through simple sequential steps, reducing device complexity during manufacturing while enabling the high-performance structure.
4Manufacturing precision
If precise feature size control is implemented to maintain manufacturing precision, then structural integrity is improved, but manufacturing process complexity increases
Solution Approach 1:
The mandrel is formed as a preliminary structure with precisely controlled dimensions, serving as a template for subsequent spacer formation. This preliminary action establishes the feature size control early in the process, and the self-aligned spacer deposition maintains this precision without requiring additional alignment steps, thus avoiding increased process complexity.
Solution Approach 2:
The feature size control is segmented into separate deposition steps for the first and second spacers, each with controlled thickness. This segmentation allows independent optimization of each layer's dimensions while maintaining overall manufacturing precision, without requiring a single complex process step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances integration density and performance of semiconductor devices by enabling precise control over feature sizes and structural integrity, improving the manufacturing process for GAA structures.
Implementation Method 1
performing a wire-release process to form nanosheets and source/drain regions, using techniques like epitaxial growth, chemical vapor deposition, and etching to achieve precise feature sizes and structural integrity
Implementation Method 2
forming a multi-layer structure with alternating semiconductor layers, patterning fins and isolation regions, and creating gate stacks and spacers, followed by a wire-release process to form nanosheets and source/drain regions, using techniques like epitaxial growth, chemical vapor deposition, and etching
Implementation Method 3
forming a multi-layer structure with alternating semiconductor layers, patterning fins and isolation regions, and creating gate stacks and spacers, followed by a wire-release process to form nanosheets and source/drain regions, using techniques like epitaxial growth, chemical vapor deposition, and etching
Data Source
AI summary
Semiconductor devices using a dielectric structure and methods of manufacturing are described herein. The semiconductor devices are directed towards gate-all-around (GAA) devices that are formed over a substrate and are isolated from one another by the dielectric structure. The dielectric structure is formed over the fin between two GAA devices and cuts a gate electrode that is formed over the fin into two separate gate electrodes. The two GAA devices are also formed with bottom spacers underlying source/drain regions of the GAA devices. The bottom spacers isolate the source/drain regions from the substrate. The dielectric structure is formed with a shallow bottom that is located above the bottoms of the bottom spacers.