GAA Electrochemical Memory Cell with Interface Layer
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Solution Overview
Problem
Existing semiconductor memory technologies face challenges in achieving high operational speed, low power consumption, and improved integration degree due to limitations in the accuracy of resistance ratios in electrochemical memory cells.
Innovation Solution
The proposed solution involves an electrochemical memory cell design that includes nano patterns with a gate all around (GAA) structure, an interface layer, and a gate that surrounds the nano patterns, allowing for ion exchange across all surfaces for improved memory operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional electrochemical memory cell structure is used, then manufacturing is simpler, but operational speed and set/reset ratio accuracy deteriorate
Solution Approach 1:
The channel region is divided into multiple segments stacked vertically, with each segment having its own gate electrode. This segmentation increases the total gate-channel interaction surface area, improving ion exchange efficiency and operational speed while maintaining manageable structural complexity through modular stacking
Solution Approach 2:
The memory cell transitions from a planar 2D structure to a 3D stacked structure with gates wrapping around channel segments in multiple dimensions. This dimensional change increases the effective gate control surface area without proportionally increasing footprint area, improving operational characteristics
2Use of energy by moving object
If conventional memory cell structure is used, then device complexity is lower, but power consumption increases
Solution Approach 1:
An interface layer is introduced between the channel region and gate electrode to mediate ion exchange. This intermediary layer enables more efficient and controlled ion transfer, reducing the energy required for switching operations while adding only moderate structural complexity
Solution Approach 2:
The interface layer modifies the chemical and electrical parameters at the gate-channel boundary, optimizing ion exchange kinetics and reducing the voltage required for switching, thereby decreasing power consumption
3Measurement precision
If conventional electrochemical memory cell is used, then manufacturing precision requirements are lower, but set/reset ratio accuracy deteriorates
Solution Approach 1:
The channel is segmented into multiple discrete regions that can be independently controlled by separate gates. This segmentation allows for more precise control of resistance states and improves set/reset ratio accuracy while distributing the manufacturing precision requirements across multiple smaller, more manageable features
Solution Approach 2:
Different regions of the channel can have locally optimized properties through the interface layer and gate configuration, allowing tailoring of ion exchange characteristics in specific areas to achieve desired set/reset ratios without requiring uniform high precision across the entire structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the set/reset ratio, reduces power consumption, and enables rapid operation by facilitating efficient ion exchange and resistance changes across all surfaces of the nano patterns.
Implementation Method 1
The electrochemical memory cell may perform a memory operation by an ion exchange with a channel in accordance with a gate voltage (or a gate current)
Implementation Method 2
at least one of the nano patterns, the gate and the interface layer may include a material generating ions in an electrochemical reaction to be used for a memory operation
Implementation Method 3
The nano patterns may include a variable resistance material
Data Source
AI summary
An electrochemical memory cell may include a plurality of nano patterns, a gate and an interface layer. The nano patterns may be stacked on an active region by a set gap. The gate may surround all surfaces of each of the nano patterns. The interface layer may be interposed between the nano patterns and the gate. The nano patterns may include a variable resistance material.