Gate-All-Around FeRAM Structure for High-Density Memory Scaling
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Solution Overview
Problem
The increasing memory cell density in semiconductor devices leads to compact structures with reduced sizes, posing challenges in maintaining performance.
Innovation Solution
Integration of gate all-around (GAA) transistor structures with ferroelectric random access memory (FeRAM) devices, utilizing multi-patterning photolithography processes to create smaller pitches and enhance memory device integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cell density is increased to reduce device size, then integration density improves, but manufacturing precision and structural control become more difficult
Solution Approach 1:
The patent applies segmentation by dividing the memory cell structure into multiple discrete layers including alternating ferromagnetic and non-magnetic layers. This layered segmentation enables precise control of each individual layer's thickness and composition, achieving high manufacturing precision while maintaining high memory cell density. The segmented structure allows independent optimization of each layer for its specific function.
Solution Approach 2:
The patent transitions from planar two-dimensional memory cell arrangements to three-dimensional vertical stacking of alternating ferromagnetic and non-magnetic layers. This dimensional change enables significantly higher integration density by utilizing the vertical dimension, while the thin-film deposition techniques provide precise control over each layer's thickness, maintaining manufacturing precision despite the increased complexity.
2Quantity of substance
If device size is reduced to increase integration density, then memory capacity improves, but electrical coupling and access efficiency deteriorate
Solution Approach 1:
The patent implements nesting by placing non-magnetic layers between ferromagnetic layers in a sandwich structure, where each layer is embedded within the other. This nested arrangement maintains efficient electrical coupling between adjacent ferromagnetic layers while achieving high integration density through vertical stacking. The non-magnetic layers provide electrical isolation and magnetic field confinement, enabling compact design without sacrificing coupling efficiency.
Solution Approach 2:
The non-magnetic layers serve as intermediaries between ferromagnetic layers, facilitating controlled magnetic coupling while providing electrical isolation. These intermediary layers enable efficient electrical access and signal transmission between memory cells despite the reduced device size and increased integration density, solving the trade-off between compactness and operational efficiency.
Data Source
AI summary
A transistor includes a dielectric layer, a channel region, a gate electrode and source and drain electrodes. The channel region is disposed over the first surface of the dielectric layer. The gate electrode wraps around the channel region, wherein a portion of the gate electrode is disposed under the first surface of the dielectric layer. The source and drain electrodes are disposed at opposite sides of the gate electrode and over the first surface of the dielectric layer.