Fluorine Drive-In for GAA Gate Dielectrics With Less Oxide Damage
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Solution Overview
Problem
As semiconductor devices continue to reduce minimum feature sizes for increased integration density, challenges arise in optimizing the performance of gate-all-around (GAA) transistors, particularly in adjusting the distribution of fluorine in gate dielectrics to enhance transistor performance.
Innovation Solution
A method is introduced to incorporate fluorine into the gate dielectrics of GAA transistors by forming semiconductor nanostructures, depositing a fluorine-containing layer, and adjusting the distribution of fluorine through a drive-in process, using diffusion liners with tailored profiles to optimize performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine is incorporated into gate dielectrics to enhance transistor performance, then device efficiency is improved, but gate oxide damage may occur
Solution Approach 1:
A fluorine-containing layer is deposited on the gate dielectric before subsequent processing steps. This preliminary fluorine incorporation protects the gate oxide during later manufacturing processes while providing performance enhancement benefits.
Solution Approach 2:
The fluorine-containing layer acts as an intermediary between the gate dielectric and other materials/processes. It mediates the interaction by providing fluorine atoms that passivate the gate oxide surface, reducing damage from subsequent processing while maintaining electrical performance.
2Productivity
If minimum feature sizes are reduced to increase integration density, then more components can be integrated, but additional problems arise in optimizing transistor performance
Solution Approach 1:
The fluorine-containing layer is applied selectively to the gate dielectric surface in the miniaturized transistor structure. This local treatment addresses performance optimization needs specifically at the gate interface, enabling reliable operation despite reduced feature sizes and increased integration density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for improved adjustment of transistor performance by controlling the fluorine distribution in gate dielectrics, reducing gate oxide damage and enhancing device efficiency.
Implementation Method 1
performing a drive-in process to drive fluorine in the fluorine-containing layer into the gate dielectric
Implementation Method 2
depositing a fluorine-containing layer on the gate dielectric
Implementation Method 3
depositing a fluorine-containing layer on the gate dielectric
Data Source
AI summary
A method includes removing a dummy gate stack to form a trench between gate spacers, and removing a sacrificial layer contacting a semiconductor region. The sacrificial layer and the semiconductor region are in the trench. The method further includes depositing a gate dielectric into the trench and on the semiconductor region, depositing a liner on the gate dielectric, depositing a fluorine-containing layer over the liner, performing a drive-in process to drive fluorine in the fluorine-containing layer into the gate dielectric, and depositing a conductive layer over the gate dielectric.