GAA Nanostructure Gate Layout With Tapered Dielectric Wall
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and the need for advanced manufacturing processes.
Innovation Solution
The implementation of gate-all-around (GAA) transistor structures with a dielectric wall structure between fin structures, utilizing a dummy gate dielectric layer to reduce the effective width of the nanostructures, thereby improving power efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce OFF-state current, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The semiconductor structure is divided into multiple fin structures (first fin structure, second fin structure, etc.) arranged in parallel, with each fin acting as an independent gate-controlled channel. This segmentation allows the complex multi-gate functionality to be achieved through simpler, replicated unit structures, improving manufacturability while maintaining enhanced gate control.
Solution Approach 2:
The patent implements gate-all-around structures where gate material completely surrounds each fin structure on three sides, creating a nested configuration where the gate is embedded within the fin structure. This nesting provides superior gate control compared to planar devices while using standard fabrication processes.
2Productivity
If device dimensions are scaled down to improve production efficiency and lower costs, then productivity is improved, but manufacturing process complexity increases
Solution Approach 1:
The channel is segmented into multiple vertical fins instead of a single planar channel, allowing scaled-down dimensions in the planar direction while maintaining or increasing total channel area through vertical stacking. This segmentation enables continued scaling benefits without proportionally increasing process complexity.
Solution Approach 2:
The patent transitions from two-dimensional planar channels to three-dimensional vertical fins, adding the vertical dimension to the channel structure. This dimensional change allows continued scaling in the planar directions while utilizing the vertical space for enhanced channel area, improving productivity without requiring proportional increases in manufacturing complexity.
3Area of stationary object
If fin structures are placed closer together to increase device density, then area is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The device is segmented into multiple identical fin structures that can be formed using replicated fabrication steps. This segmentation allows close spacing between fins while maintaining manufacturing precision through process replication rather than requiring complex single-step patterning of all fins simultaneously.
Solution Approach 2:
The patent forms fins with dimensions and spacing that may be tighter than minimum requirements, then uses subsequent selective removal or modification steps to achieve the final precise configuration. This partial action approach allows initial formation with relaxed precision requirements followed by refinement steps that ensure final alignment accuracy.
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first nanostructures formed over a substrate along a first direction, and second nanostructures formed over the substrate along the first direction. The semiconductor structure includes a first gate structure formed over the first nanostructures along a second direction, and a second gate structure formed over the second nanostructures along the second direction. The semiconductor structure also includes a dielectric wall structure between the first gate structure and the second gate structure along the second direction. The dielectric wall structure includes a top portion and a bottom portion, and a top width of a top surface of the top portion is smaller than a bottom width of a bottom surface of the bottom portion of the dielectric wall structure.