Hybrid Nanostructure GAA Gate Formation With Isolation Protection
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Solution Overview
Problem
The integration of gate-all-around (GAA) transistor fabrication is challenging due to the complexity of manufacturing processes, particularly in achieving precise control over channel regions and gate structures, which affects the performance and efficiency of semiconductor devices.
Innovation Solution
A method for manufacturing semiconductor structures with GAA transistors involves forming fin structures over a substrate, alternately stacking semiconductor material layers, and creating isolation and capping layers to define channel regions, with protection layers preventing isolation structure loss and ensuring accurate gate formation around nanostructures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate-all-around transistor fabrication is implemented to improve gate control and reduce short-channel effects, then device performance is improved, but manufacturing process complexity increases
Solution Approach 1:
The manufacturing process is divided into distinct stages: forming fin structures, depositing alternating semiconductor material layers (e.g., SiGe and Si), creating isolation structures, and forming gate structures. Each stage is independently optimized and controlled, allowing complex GAA transistor fabrication to be managed through systematic segmentation of the overall process.
Solution Approach 2:
The patent implements a nested structure where gate structures completely surround channel regions, forming a gate-all-around configuration. This nesting approach provides superior gate control over the channel compared to planar or partial-gate structures, directly improving device reliability while the systematic fabrication steps manage the associated manufacturing complexity.
2Productivity
If miniaturization is pursued to reduce device dimensions and improve production efficiency, then production efficiency is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent employs preliminary actions in the fabrication process by first forming fin structures and alternately stacking semiconductor material layers (such as SiGe and Si layers) before creating the gate structures. This preliminary preparation of the channel region enables subsequent gate formation to proceed more efficiently, allowing miniaturization to be achieved while managing process complexity through pre-organized structures.
Solution Approach 2:
The patent transitions from two-dimensional planar structures to three-dimensional gate-all-around structures by wrapping gates completely around vertical channel regions. This dimensional change enables better gate control at scaled dimensions, improving production efficiency at smaller feature sizes while the systematic fabrication steps manage the increased manufacturing complexity.
3Manufacturing precision
If isolation structures are formed to define channel regions precisely, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent extracts and removes sacrificial fin structures after the gate structures have been formed around the channel regions. This extraction approach allows precise definition of channel regions through the gate-all-around configuration while simplifying the final device structure by removing unnecessary intermediate elements, thereby improving manufacturing precision without permanently increasing device complexity.
Solution Approach 2:
The patent uses intermediary structures such as isolation structures and sacrificial fins that temporarily define channel regions during fabrication. These intermediary elements enable precise channel region definition during the manufacturing process, while their temporary nature means they can be removed or integrated later, managing the overall device complexity.
Data Source
AI summary
Semiconductor structures and method for manufacturing the same are provided. The semiconductor structure includes a substrate and a first fin structure formed over the substrate. The semiconductor structure also includes an isolation structure formed around the first fin structure and a protection layer formed on the isolation structure. The semiconductor structure also includes first nanostructures formed over the first fin structure and a gate structure surrounding the first nanostructures. In addition, a bottom surface of the gate structure and the top surface of the isolation structure are separated by the protection layer.