GAA Gate Isolation Structure With Source/Drain Spacer Confinement
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Solution Overview
Problem
The miniaturization of semiconductor ICs has introduced greater complexity in manufacturing processes, and there is a need for improved gate control and reduced short-channel effects in multi-gate devices like gate-all-around transistors (GAA) to support smaller and faster electronic devices with complex functions.
Innovation Solution
The formation of semiconductor structures with source/drain spacer structures that confine lateral growth and allow for narrower widths, along with self-aligned gate isolation structures to enhance manufacturing yield and performance by relaxing photolithography process limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor IC dimensions are scaled down to improve production efficiency and lower costs, then productivity increases, but manufacturing process complexity increases
Solution Approach 1:
The patent divides the gate structure into multiple segments including a first gate structure and a second gate structure with different orientations. The first gate structure extends in a first direction and the second gate structure extends in a second direction, allowing independent optimization of each segment's manufacturing process while maintaining overall device functionality
Solution Approach 2:
The patent introduces a third dimension by creating gate structures with different orientations (first direction and second direction) to achieve three-dimensional gating control. This dimensional approach enables better electrostatic control and reduced short-channel effects without further lateral scaling that would increase process complexity
2Length of moving object
If conventional scaling is used to reduce device dimensions, then device size decreases, but gate control and short-channel effects deteriorate
Solution Approach 1:
The patent transitions from planar two-dimensional gating to three-dimensional gate-all-around structures by adding gate structures in multiple directions (first gate structure in first direction, second gate structure in second direction). This dimensional evolution provides superior electrostatic control and mitigates short-channel effects without requiring further lateral dimension reduction
Solution Approach 2:
The patent implements nested gate structures where the second gate structure is positioned around or adjacent to the first gate structure, creating a multi-layered gating arrangement. This nesting approach enables comprehensive channel control from multiple directions, improving gate control effectiveness while maintaining compact device footprint
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a first gate stack wrapping around first nanostructures, a second gate stack wrapping around second nanostructures, a gate isolation structure interposing between the first gate stack and the second gate stack, a first source/drain feature adjoining the first nanostructures, a second source/drain feature adjoining the second nanostructures, and a source/drain spacer structure interposing between the first source/drain feature and the second source/drain feature. The gate isolation structure covers a sidewall of the source/drain spacer structure.