GAA Gate Structure With Protection Layer for Etch Damage Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high device density, performance, and cost-effectiveness due to fabrication and design issues in three-dimensional designs, particularly in nanometer technology process nodes.
Innovation Solution
The development of a gate all around (GAA) transistor structure with a specific semiconductor layer configuration and protective layer formation process, including the use of selective epitaxial growth, chemical vapor deposition, and etching processes to create stacked nanowire structures and a protective layer that enhances device performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If three-dimensional designs are used to achieve higher device density and performance, then device density and performance are improved, but fabrication complexity and design challenges increase
Solution Approach 1:
The device is segmented into distinct functional layers including semiconductor layers, dielectric layers, and conductive layers. This segmentation allows each layer to be optimized and fabricated separately, reducing overall fabrication complexity while maintaining high device density through the three-dimensional stacked architecture
Solution Approach 2:
The invention transitions from planar two-dimensional device layouts to three-dimensional vertically stacked structures. By adding the vertical dimension with multiple stacked semiconductor and dielectric layers, device density is significantly improved without proportionally increasing fabrication complexity, as the stacking approach provides a systematic method for three-dimensional integration
2Reliability
If protective layers are added to protect underlying layers from etching damage, then reliability is improved, but device structure complexity increases
Solution Approach 1:
Protective layers are formed on the dielectric layers before subsequent etching processes are performed. This preliminary protective action prevents etching damage to underlying critical structures, improving reliability. The protective layers are strategically placed only where needed based on process requirements, rather than uniformly across the entire device, thereby limiting the increase in structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves device performance by reducing parasitic capacitance and protecting underlying layers from damage during etching, leading to enhanced AC performance and reliability of semiconductor devices.
Implementation Method 1
the protection layer is selectively formed on the fill layer
Implementation Method 2
chemical vapor deposition
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a gate structure formed over nanostructures. The gate structure includes a gate dielectric layer, and a fill layer over the gate dielectric layer. The semiconductor device structure includes a protection layer formed over the fill layer, and a gate spacer layer formed adjacent to the gate structure. The semiconductor device structure includes an insulating layer formed over the protection layer, and the insulating layer is in direct contact with the gate spacer layer.