Gate-All-Around Gate Separation Structure for Short-Channel Control

Solution Overview

Problem

The increasing demand for high performance, high speed, and multi-functionality in semiconductor devices leads to a short channel effect in transistors, deteriorating the reliability of integrated circuits, and there is a need for improved gate cutting technology with reduced design rules.

Innovation Solution

A semiconductor device design featuring a substrate with intersecting channel structures, separated by a gate separation pattern and a gate capping layer, which includes different insulating materials to enhance integration and reduce short channel effects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If gate cutting technology is applied to reduce design rules, then device integration is improved, but manufacturing precision deteriorates due to short channel effects

Engineering Contradiction:

Improvedevice integrationVSAvoidshort channel effect control

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The gate structure is divided into multiple gate structures (first gate structure and second gate structure) separated by a gate separation pattern. This segmentation allows each gate to be independently controlled, reducing short channel effects while maintaining high device integration. The gate separation pattern creates distinct regions that prevent interference between adjacent gates, enabling precise manufacturing control.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different insulating materials are used in different regions: the gate separation pattern uses a first insulating material while the gate capping layer uses a second insulating material. This local differentiation optimizes electrical isolation properties in specific areas, improving manufacturing precision by addressing short channel effects locally without compromising overall device integration.

Inventive Principle:

Principle #3Local quality

2Productivity

If multiple gate structures are disposed close together to improve integration, then device density increases, but reliability deteriorates due to increased short channel effects

Engineering Contradiction:

Improvedevice densityVSAvoidshort channel effect reliability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The gate structure is divided into multiple gate structures (first gate structure and second gate structure) separated by a gate separation pattern. This segmentation allows each gate to be independently controlled, reducing short channel effects while maintaining high device integration. The gate separation pattern creates distinct regions that prevent interference between adjacent gates, enabling precise manufacturing control.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The gate separation pattern acts as an intermediary structure between the first and second gate structures. This intermediate element provides electrical isolation and mechanical separation, allowing multiple gates to be disposed close together for high density while preventing short channel effects from compromising reliability. The gate capping layer with extension portion further mediates the interaction between adjacent gates.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Ease of manufacture

If gate separation pattern with single insulating material is used, then manufacturing process is simplified, but manufacturing precision deteriorates due to defects in contact structure formation

Engineering Contradiction:

Improveprocess simplicityVSAvoidcontact structure defect rate

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

Different insulating materials are used in different regions: the gate separation pattern uses a first insulating material while the gate capping layer uses a second insulating material. This local differentiation optimizes electrical isolation properties in specific areas, improving manufacturing precision by addressing short channel effects locally without compromising overall device integration.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The gate separation structure employs composite materials with different insulating properties. The first insulating material in the gate separation pattern and the second insulating material in the gate capping layer work together to provide both electrical isolation and mechanical support, reducing defects in contact structure formation while maintaining ease of manufacture through a systematic multi-material approach.

Inventive Principle:

Principle #40Composite materials

Data Source

PatentUS12575175B2Multiple gate-all-around semiconductor devices with gate separation

Publication Date: 2026.03.10 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor memory device includes: a substrate having first and second channel structures extending in a first direction arranged spaced apart in a second direction; a first gate structure disposed on the first channel structure; a second gate structure disposed on the second channel structure; first source/drain regions disposed on opposite sides of the first gate structure; second source/drain regions disposed on opposite sides of the second gate structure; a gate separation pattern disposed between the gate structures to directly contact the gate structures and having an upper surface disposed at a level lower than an upper surface of the gate structures along a third direction; and a gate capping layer disposed on the gate structures and having an extension portion disposed between the gate structures such that the extension portion directly contacts the gate structures, the gate capping layer being connected to the gate separation pattern.