Gate-All-Around Transistor Gate Shape for Leakage and Conductivity
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high reliability and multi-functionality due to limitations in transistor design, particularly in gate-all-around type transistors, which affect their electrical characteristics and integration capabilities.
Innovation Solution
The semiconductor device design includes a gate-all-around type transistor with specific channel and source/drain patterns, where the gate electrodes have convex and concave segments, and barrier insulation patterns are used to enhance electrical characteristics by minimizing leakage current and optimizing conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistor design is used, then fabrication process is simpler, but electrical characteristics and integration density are limited
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode segment, second gate electrode segment, third gate electrode segment) that wrap around the channel pattern from different directions. This segmentation enables the gate-all-around structure that provides enhanced electrical characteristics while maintaining manageable fabrication complexity through systematic process steps.
Solution Approach 2:
The gate electrode transitions from a planar two-dimensional structure to a three-dimensional gate-all-around structure that surrounds the channel pattern vertically and laterally. This dimensional change enables superior electrical control and integration density improvement.
2Reliability
If gate-all-around transistor design is implemented, then electrical characteristics are enhanced, but leakage current increases
Solution Approach 1:
Different segments of the gate electrode are positioned at different locations around the channel pattern (first segment from one side, second segment from opposite side, third segment vertically). This local differentiation allows optimized electrical control while minimizing leakage current through strategic gate positioning and dimensional control.
Solution Approach 2:
The invention controls the dimensions and positions of gate electrode segments relative to the channel pattern, including the height, width, and spacing of each segment. By optimizing these parameters, the gate-all-around structure achieves enhanced electrical characteristics while suppressing leakage current through precise dimensional control.
3Productivity
If channel width is reduced for higher integration, then device density increases, but electrical performance deteriorates
Solution Approach 1:
The gate electrode extends in multiple dimensions around the channel pattern, including vertical extension and lateral wrapping. This three-dimensional gate structure provides enhanced electrical control and performance while enabling smaller effective channel dimensions for higher integration density.
Solution Approach 2:
The segmented gate structure allows different portions of the gate to control different regions of the channel pattern. This segmentation enables effective electrical control in reduced-size devices, maintaining performance while achieving higher integration density through compact design.
Data Source
AI summary
A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.