GAA Nanostructure Gate Layout With Wall Support and Isolation
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Solution Overview
Problem
The integration of gate-all-around (GAA) transistor features in semiconductor fabrication is challenging, requiring improved methods to enhance gate control and reduce short-channel effects.
Innovation Solution
A method involving double-patterning or multi-patterning processes to form GAA structures, including the use of spacers and wall structures to stabilize floating gates, with specific materials and deposition techniques to create nanostructures and isolation layers, followed by the formation of gate structures around the channel regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional single-patterning methods are used to form GAA structures, then the fabrication process is simpler, but gate control is insufficient and short-channel effects are not reduced
Solution Approach 1:
The fabrication process is divided into multiple patterning steps (double-patterning or multi-patterning) to achieve precise GAA structure formation. This segmentation allows for better gate control and reduced short-channel effects by enabling more accurate positioning and dimensional control of the gate structures around nanowire channels.
Solution Approach 2:
Spacer structures are formed in advance before the final gate patterning. These preliminary spacer structures serve as templates that guide subsequent etching and material deposition steps, ensuring precise gate alignment and dimensions while simplifying the overall complex fabrication process.
2Reliability
If gate structures are formed without wall structures, then the fabrication process is simpler, but floating gate structures become unstable and collapse
Solution Approach 1:
Wall structures are introduced as intermediary support elements during the gate formation process. These wall structures provide mechanical support to the floating gate structures, preventing collapse while the gate is being formed. The wall structures act as temporary scaffolding that can be removed after the gate structure is stabilized.
Solution Approach 2:
The wall structures are formed in advance to provide protective support before the gate structure is fully formed. This preliminary cushioning prevents potential damage or collapse of the floating gate structures during subsequent processing steps, ensuring structural integrity throughout fabrication.
3Reliability
If active regions are not isolated, then the fabrication process is simpler, but device performance deteriorates due to lack of electrical isolation
Solution Approach 1:
Isolation structures are formed selectively between active regions rather than uniformly across the entire substrate. This local isolation approach provides necessary electrical separation to improve device performance and prevent crosstalk, while minimizing the overall amount of isolation material and reducing fabrication complexity compared to complete substrate isolation.
Data Source
AI summary
A semiconductor device structure includes first nanostructures formed over a substrate. The structure also includes second nanostructures formed over the substrate. The structure also includes a wall structure formed between the first nanostructures and the second nanostructures. The structure also includes a gate structure formed across the first nanostructures, the second nanostructures, and the wall structure. The wall structure includes a main portion and an extending portion, and the main portion is in direct contact with the first nanostructures and the second nanostructures. The extending portion protrudes from the sidewalls of the second nanostructures.