Gate-All-Around Isolation Structure for Tighter Nanostructure Spacing
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to complexity and the need for advanced fabrication processes.
Innovation Solution
A method for manufacturing semiconductor structures with isolation features that include nanostructures, where a gate structure wraps around the nanostructures, and source/drain structures are separated by backside isolation, allowing for reduced device size and improved integration of multi-gate devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce short-channel effects, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The semiconductor structure is divided into multiple gate structures (first gate structure and second gate structure) that are spatially separated by isolation structures. This segmentation allows each gate to independently control its channel region, improving gate control performance while enabling modular fabrication processes that manage complexity through standardized isolation patterns.
Solution Approach 2:
Isolation structures serve as intermediary elements between adjacent gate structures. These isolation structures physically separate the gates while maintaining a controlled environment for fabrication, enabling complex multi-gate integration without requiring entirely new fabrication processes - the isolation structures act as mediators that simplify the overall manufacturing approach.
2Productivity
If device dimensions are scaled down to improve production efficiency and lower costs, then productivity increases, but manufacturing precision requirements become more stringent
Solution Approach 1:
The patent introduces a vertical dimension by forming gate structures that wrap around or are positioned at different heights relative to the channel. This three-dimensional arrangement allows for improved gate control and reduced short-channel effects without further lateral scaling, thereby maintaining manufacturing precision while achieving enhanced device performance.
Solution Approach 2:
The gate structures are nested within a defined fabrication envelope established by the isolation structures. This nesting approach allows multiple gate structures to be integrated within a controlled spatial framework, enabling scaled-down dimensions while maintaining precision through the hierarchical organization of structures within standardized isolation boundaries.
3Volume of moving object
If the distance between nanostructures is reduced to enable smaller device size, then device miniaturization is achieved, but gate control over each channel becomes more difficult
Solution Approach 1:
The gate structures are designed with dynamic positioning relative to the channel, where gates can wrap around or extend over the channel region. This dynamic geometric configuration allows the gate to maintain effective control even as the distance between adjacent nanostructures is reduced, adapting the gate-channel overlap geometry to preserve control effectiveness at smaller scales.
Solution Approach 2:
The gate structures utilize curved or wraparound geometries rather than simple planar configurations. This curvature allows the gate to envelop the channel from multiple angles, maintaining strong electrostatic control over the channel even when nanostructures are closely spaced, thereby preserving gate control effectiveness while achieving device miniaturization.
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first nanostructures and second nanostructures formed over the substrate. The semiconductor structure also includes a gate structure including a first portion wrapping around the first nanostructures and a second portion wrapping around the second nanostructures. The semiconductor structure also includes a dielectric feature sandwiched between the first portion and the second portion of the gate structure. In addition, the dielectric feature includes a bottom portion and a top portion over the bottom portion, and the top portion of the dielectric feature includes a shell layer and a core portion surrounded by the shell layer.