GAA Transistor Layer Spacing for Thick Gate Dielectric Integration
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Solution Overview
Problem
Conventional methods struggle to integrate GAA transistors with thicker gate dielectric layers and gates on the same substrate due to space constraints, leading to reduced yield and performance issues.
Innovation Solution
The proposed semiconductor device and method involve forming GAA transistors with varying layer quantities and spacing distances, ensuring that thicker gate dielectric layers and gates can be integrated without space constraints by adjusting the distance between nanowires/nanosheets in different regions of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional manufacturing methods are used for GAA transistors, then transistors with uniform gate dielectric thickness and gate thickness can be manufactured, but it is difficult to manufacture both transistors with thicker gate dielectric layers and transistors with thinner gate dielectric layers on the same substrate
Solution Approach 1:
The patent applies local quality by configuring different spacing distances between nanowire/nanosheet layers in different regions of the substrate. Specifically, a first spacing distance is used in a first region for transistors requiring thicker gate dielectric layers, while a second spacing distance is used in a second region for transistors requiring thinner gate dielectric layers. This allows each region to have optimized local characteristics for its specific transistor type, enabling the manufacturing of multiple GAA transistor types on the same substrate with appropriate gate dielectric thicknesses for each application.
2Reliability
If the gate dielectric layer and gate are made thicker to meet operating requirements, then the space between nanowire/nanosheet and substrate becomes too small, preventing complete filling of gate dielectric and gate materials
Solution Approach 1:
The patent applies parameter changes by adjusting the spacing distance between nanowire/nanosheet layers as a key geometric parameter. By increasing the spacing distance in regions where thicker gate dielectric layers are required, the patent creates sufficient vertical space to accommodate both the thicker gate dielectric layer and complete gate material filling. This parameter adjustment ensures that the space between the nanowire/nanosheet and substrate is adequate for forming complete gate structures, thereby maintaining manufacturing precision and material filling completeness while achieving the required gate thickness for reliable operation.
3Ease of manufacture
If all GAA transistors use the same layer spacing, then manufacturing is simplified, but transistors requiring thicker gate dielectric layers cannot be properly formed
Solution Approach 1:
The patent implements local quality by dividing the substrate into multiple regions with different spacing configurations. Each region is optimized for specific transistor requirements: regions with larger spacing for transistors needing thicker gate dielectric layers, and regions with smaller spacing for transistors with standard thickness requirements. This regional differentiation allows the manufacturing process to accommodate diverse transistor specifications while maintaining overall process integration, achieving both ease of manufacture through standardized regions and reliability through application-specific optimizations.
Data Source
AI summary
A semiconductor device and a method for manufacturing the same. The semiconductor device includes: a first gate-all-around (GAA) transistor disposed in the first region, including a first nanowire or nanosheet of at least one first layer, the at least one first layer and the substrate form a first group, among which all pairs of adjacent layers are separated by first distances, respectively; and a second GAA transistor disposed in the second region, including a second nanowire or nanosheet of at least two second layers, the at least two second layers and the substrate form a second group, among which the second layers are separated by second distances, respectively; where a minimum first distance is greater than a maximum second distance, and a quantity of the at least one first layer is less than a quantity of the at least two second layers.