GAA Semiconductor Layout With Isolation Lines for Gate Uniformity
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Solution Overview
Problem
The increasing complexity and power dissipation in semiconductor integrated circuits due to scaling down processes lead to challenges in maintaining uniformity and performance of gate electrodes, resulting in reduced circuit efficiency and increased current leakage.
Innovation Solution
The implementation of gate-all-around (GAA) transistor structures with improved isolation structures, where gate electrodes are spaced apart by isolation lines, enhancing uniformity and reducing current leakage by using a layout with rectangle-shaped isolation lines, thereby improving gate CD uniformity and reducing strain effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If scaling down process is used to increase functional density, then production efficiency and cost are improved, but power dissipation increases and gate electrode uniformity deteriorates
Solution Approach 1:
The gate electrode is divided into multiple segments separated by isolation lines, creating isolated gate regions. This segmentation prevents current leakage between adjacent gates while maintaining the scaled-down geometry for high functional density, thus resolving the contradiction between productivity improvement and power dissipation increase.
Solution Approach 2:
Isolation lines are introduced as intermediary structures between adjacent gate electrodes. These isolation lines act as mediators that electrically isolate neighboring gates, preventing harmful current leakage and reducing power dissipation while allowing the circuit to maintain high functional density through continued scaling.
2Productivity
If scaling down process is used to increase functional density, then production efficiency is improved, but gate electrode uniformity and matching deteriorate
Solution Approach 1:
By segmenting the gate electrode structure with isolation lines, each gate region can be independently formed with precise dimensional control. This segmentation approach maintains gate electrode uniformity and matching even as overall device geometry is scaled down to increase functional density.
Solution Approach 2:
The isolation lines create locally isolated regions with controlled electrical and physical properties. This local quality approach ensures that each gate electrode maintains uniform characteristics independent of neighboring structures, preserving manufacturing precision while enabling continued scaling for higher productivity.
3Quantity of substance
If gate electrodes are placed closer together to increase circuit density, then functional density is improved, but current leakage between gates increases
Solution Approach 1:
The gate electrode structure is segmented into isolated regions by insertion of isolation lines. This segmentation physically separates adjacent gates, preventing current leakage pathways while maintaining close spacing to achieve high circuit density and functional integration.
Solution Approach 2:
Isolation lines serve as intermediary barrier structures positioned between adjacent gate electrodes. These intermediaries block current leakage while allowing the gates to remain in close proximity, thus enabling high circuit density without the harmful effect of inter-gate current leakage.
4Ease of manufacture
If continuous gate electrode structure is used to simplify manufacturing, then ease of manufacture is improved, but strain effects and non-uniformity increase
Solution Approach 1:
The gate electrode is segmented into discrete regions separated by isolation lines. This segmentation simplifies the manufacturing process by allowing independent formation and patterning of each gate region, while simultaneously improving gate CD uniformity by eliminating strain effects that would occur in continuous structures.
Solution Approach 2:
Each segmented gate region possesses locally optimized properties with controlled dimensions and spacing. The isolation lines create distinct local zones that can be precisely controlled during manufacturing, improving gate CD uniformity while maintaining ease of manufacture through modular structure formation.
Data Source
AI summary
A method includes doping a substrate to form a first well region and a second well region having a different conductivity type than the first well region; forming a first fin structure upwardly extending above the first well region and a second fin structure upwardly extending above the second well region; forming a first gate electrode surrounding the first fin structure and a second gate electrode surrounding the second fin structure; forming first source/drain regions adjoining the first fin structure and on opposite sides of the first gate electrode and second source/drain regions adjoining the second fin structure on opposite sides of the second gate electrode; forming an isolation line interposing the first and second gate electrodes and laterally between a first one of the first source/drain regions and a first one of the second source/drain regions.