GAA Nanowire Transistor Structure for Precise Scaling Patterning
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing advanced transistor structures, particularly in achieving reliable and efficient scaling down of semiconductor devices due to increased complexity and the need for precise patterning techniques to maintain structural integrity and manufacturing yield.
Innovation Solution
The method involves forming gate all around (GAA) transistor structures using a process that includes forming a stack of semiconductor layers over a substrate, creating recesses, and using spacer layers to pattern the GAA structure, followed by the growth of source/drain portions to enhance carrier mobility, and ultimately forming semiconductor nanowires to reduce the short channel effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If planar transistors are used, then manufacturing process is simpler, but device performance and scaling capability deteriorate
Solution Approach 1:
The patent transitions from planar (2D) transistor structures to three-dimensional structures with nanowires extending vertically from the substrate. This dimensional change enables improved carrier mobility and device performance while maintaining manufacturing feasibility through established semiconductor processing techniques adapted for 3D geometries.
2Productivity
If geometric size is scaled down, then production efficiency increases and costs decrease, but processing complexity increases
Solution Approach 1:
The transistor structure is segmented into distinct functional regions including nanowire channels, source/drain regions, gate electrodes, and dielectric layers. This segmentation allows each component to be optimized and processed independently, managing complexity while enabling continued scaling for improved production efficiency.
Solution Approach 2:
The patent employs nested structures where nanowires are positioned within recesses in the substrate, gate electrodes surround the nanowires, and dielectric layers are deposited between and around these components. This nesting approach maximizes space utilization and enables continued geometric scaling while maintaining manufacturability.
3Ease of manufacture
If conventional patterning is used, then process is simpler, but structural integrity and manufacturing yield deteriorate
Solution Approach 1:
Dielectric layers are deposited and patterned before nanowire formation, creating a pre-configured structural framework. This preliminary action establishes alignment references and mechanical support structures that guide subsequent nanowire placement, ensuring structural integrity and high manufacturing yield even as devices scale to smaller geometries.
Data Source
AI summary
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a plurality of nanostructures over a substrate, and a gate electrode surrounding the nanostructures. The semiconductor device structure includes a source/drain portion adjacent to the gate electrode, and a semiconductor layer between the gate electrode and the source/drain portion.