GAA Nanowire Gate Structure With Strained Source/Drain Integration
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Solution Overview
Problem
Current methods for fabricating gate-all-around (GAA) devices face challenges in forming strain enhancement, source/drain formation, and other features, which affect the integration and performance of multi-gate transistors in semiconductor manufacturing.
Innovation Solution
A method involving the growth of epitaxial layers on a substrate, formation of fin elements, oxidation to create isolation regions, and deposition of spacer layers to facilitate the formation of high-K/metal gate structures on multiple sides of nanowire channels, enabling efficient source/drain feature creation and improved gate control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional fabrication methods are used for GAA devices, then manufacturing process compatibility is maintained, but integration of fabrication features around the nanowire becomes challenging
Solution Approach 1:
The method performs preliminary actions by forming the nanowire channel structure and gate-all-around structures before integrating source/drain features and strain enhancement features. This sequential approach allows each component to be fabricated with optimized processes while maintaining overall compatibility with conventional CMOS manufacturing
Solution Approach 2:
The fabrication process is segmented into distinct stages: nanowire formation, gate structure formation, source/drain formation, and strain enhancement. Each segment can be independently optimized and integrated, reducing the overall complexity of the multi-feature integration
2Reliability
If multi-gate device structure is implemented, then gate control is improved and short-channel effects are reduced, but fabrication complexity increases
Solution Approach 1:
The gate structure is nested around the nanowire channel in a gate-all-around configuration, providing 360-degree gate control. This nested geometry maximizes the gate's electric field coverage over the channel while maintaining a compact device footprint
Solution Approach 2:
The invention transitions from planar 2D gate control to 3D gate-all-around control by wrapping the gate structure around the nanowire channel in the vertical dimension. This dimensional change provides superior electrostatic control and mitigates short-channel effects
3Productivity
If device dimensions are scaled down, then production efficiency is improved and costs are lowered, but manufacturing process complexity increases
Solution Approach 1:
The fabrication method uses universal process modules such as selective epitaxial growth, selective oxidation, and conformal deposition that can be applied across different device sizes and configurations. These multi-functional processes maintain production efficiency while accommodating scaled dimensions
Solution Approach 2:
The method adjusts process parameters such as temperature, pressure, and deposition rates to optimize fabrication for scaled dimensions. By dynamically changing process parameters rather than fundamental process types, the system maintains efficiency across different scaling regimes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances gate control, reduces short-channel effects, and improves the integration and performance of multi-gate transistors by providing effective strain enhancement and channel isolation, supporting the fabrication of high-performance semiconductor devices.
Implementation Method 1
growth of epitaxial layers on a substrate
Implementation Method 2
oxidation to create isolation regions
Data Source
AI summary
A multi-gate semiconductor device is formed that provides a first fin element extending from a substrate. A gate structure extends over a channel region of the first fin element. The channel region of the first fin element includes a plurality of channel semiconductor layers each surrounded by a portion of the gate structure. A source/drain region of the first fin element is adjacent the gate structure. The source/drain region includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the dielectric layer.