GAA Transistor Structure for Higher Density and Current Flow
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Solution Overview
Problem
The semiconductor industry faces challenges in further increasing integration density and improving performance of electronic components due to limitations in reducing feature sizes and optimizing transistor structures.
Innovation Solution
The implementation of gate-all-around (GAA) transistor structures, which are patterned using photolithography and self-aligned processes, allowing for smaller pitches and increased effective channel width, and the integration of multi-gate devices such as FinFETs and nanosheet devices, enhancing current flow and modulating threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but manufacturing precision and device performance deteriorate due to physical limitations at smaller scales
Solution Approach 1:
The patent transitions from planar 2D transistor structures to three-dimensional structures including FinFETs with vertical fins and gate-all-around (GAA) transistors with channels wrapped around the gate electrode. This dimensional change allows the effective channel width to extend into the vertical dimension, increasing current flow capacity without reducing the lithographic feature size, thereby maintaining manufacturing precision while improving integration density.
Solution Approach 2:
The gate-all-around structure implements a nested configuration where the semiconductor channel is positioned around and surrounds the gate electrode, creating a concentric arrangement. This nested geometry maximizes the gate's control over the channel while increasing the effective channel width, allowing higher current flow without requiring smaller feature dimensions.
2Quantity of substance
If feature size is reduced to improve integration density, then component count increases, but device performance deteriorates due to reduced current flow capability
Solution Approach 1:
By introducing vertical fins in FinFET structures and three-dimensional channel configurations in GAA transistors, the effective channel width is increased in the vertical dimension. This allows the transistor to carry higher current without reducing the lithographic pitch, thereby maintaining integration density while improving power and current flow performance.
Solution Approach 2:
The gate-all-around structure employs a curved or cylindrical gate configuration that completely surrounds the semiconductor channel, providing uniform electric field distribution and maximum gate control. This curved geometry optimizes the electric field for carrier modulation, enhancing current flow capability while maintaining compact device dimensions.
3Ease of manufacture
If conventional planar transistor structures are used, then manufacturing is simpler, but effective channel width and current flow are limited
Solution Approach 1:
The patent employs self-aligned fabrication processes that utilize vertical fin structures and conformal deposition techniques to create three-dimensional transistor geometries. These processes extend conventional planar manufacturing into the vertical dimension, maintaining manufacturing simplicity while achieving increased effective channel width and improved current flow through the added dimensional complexity.
Data Source
AI summary
A method for manufacturing an integrated circuit device is provided. The method includes depositing a dielectric layer over a substrate; depositing a first gate electrode layer over the dielectric layer; removing a first portion of the dielectric layer to leave an opening between the first gate electrode layer, the substrate, and second portions of the dielectric layer; depositing a first gate dielectric layer, such that the first gate dielectric layer has a first portion in the opening and a second portion over a top surface of the first gate electrode layer; and depositing a semiconductor layer, such that the semiconductor layer has a first portion in the opening and a second portion over a top surface of the first gate dielectric layer.