GAA Transistor Isolating Feature for Leakage Reduction
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Solution Overview
Problem
The integration of gate-all-around (GAA) transistor fabrication is challenging due to the complexity of scaling down semiconductor ICs, which leads to increased off-state leakage current paths when source/drain structures are directly connected to the substrate.
Innovation Solution
An additional isolating feature is formed between the source/drain structures and the substrate to prevent current leakage, using techniques such as epitaxial growth and chemical vapor deposition to create dielectric or semiconductor isolating features that separate the source/drain structures from the substrate, thereby reducing parasitic device current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If source/drain structures are directly connected to the substrate, then manufacturing process is simplified, but off-state leakage current increases
Solution Approach 1:
An isolating feature (dielectric or semiconductor material) is introduced between the source/drain structures and the substrate. This intermediary layer prevents direct electrical connection, thereby blocking leakage current paths while maintaining structural integrity and enabling continued manufacturing progress.
2Reliability
If isolating feature is added between source/drain structures and substrate, then off-state leakage current is reduced, but device complexity increases
Solution Approach 1:
The semiconductor device is divided into distinct functional regions by introducing the isolating feature as a separate layer between the source/drain structures and substrate. This segmentation creates clear electrical isolation zones, enabling independent optimization of each region's properties and simplifying the overall design approach despite adding structural elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces off-state leakage current and improves the performance of GAA transistors by isolating the source/drain structures from the substrate, enhancing the overall semiconductor structure's efficiency and reliability.
Implementation Method 1
using techniques such as epitaxial growth and chemical vapor deposition to create dielectric or semiconductor isolating features
Implementation Method 2
using techniques such as epitaxial growth and chemical vapor deposition to create dielectric or semiconductor isolating features
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and a fin structure protruding from the substrate. The semiconductor structure also includes nanostructures formed over the fin structure and a gate structure surrounding the nanostructures. The semiconductor structure also includes a source/drain structure connected to the nanostructures and an isolating feature sandwiched between the fin structure and the source/drain structure.