Gate-All-Around Transistor Spacer Support for Mechanical Stability
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Solution Overview
Problem
Gate-all-around (GAA) transistors face mechanical instability issues due to their tall and narrow structure, leading to potential bending, non-uniformity, or collapse during manufacturing, which is more pronounced than conventional FinFET transistors.
Innovation Solution
The introduction of spacer supports positioned underneath and alongside the semiconductor channel structures provides mechanical stability by forming a support region between the gate metal and the source or drain terminals, using sacrificial materials and etching processes to create a stable structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If GAA transistor structure is adopted to reduce gate length and increase contact area, then device performance is improved, but mechanical stability deteriorates due to greater vertical height than horizontal width
Solution Approach 1:
The support structure is segmented into two distinct portions: a first portion positioned underneath the semiconductor channel structure and a second portion positioned alongside it. This segmentation allows each portion to fulfill specific mechanical support functions, collectively enhancing overall structural stability while maintaining the GAA transistor's performance benefits.
Solution Approach 2:
The support structure extends in multiple spatial dimensions - vertically underneath the channel and horizontally alongside it. This multi-dimensional configuration provides comprehensive mechanical support from different directions, preventing vertical bending and maintaining structural integrity throughout the transistor fabrication process.
2Productivity
If sacrificial semiconductor material is added beneath the fin to increase contact area, then device performance is improved, but vertical height increases causing less mechanical stability
Solution Approach 1:
The support structure acts as an intermediary element between the substrate and the semiconductor channel structure. It provides mechanical support and stability without directly interfering with the electrical functionality of the transistor, enabling both high contact area and structural stability to coexist.
3Stability of the object's composition
If spacer support is added to improve mechanical stability, then structural integrity is improved, but device complexity increases
Solution Approach 1:
The support structure serves multiple functions simultaneously: it provides mechanical support underneath the channel, extends alongside the channel for lateral stability, and acts as a spacer between the gate and source/drain regions. This multi-functionality reduces the need for separate components, thereby limiting the increase in device complexity.
Data Source
AI summary
The disclosure relates to gate-all-around (GAA) transistors with a spacer support, and related methods. A GAA transistor according to embodiments of the disclosure includes: at least one semiconductor channel structure extending between a source terminal and a drain terminal; a spacer support having a first portion thereof positioned underneath and a second portion thereof positioned alongside a first portion of the at least one semiconductor channel structure; and a gate metal surrounding a second portion of the at least one semiconductor channel structure between the source and drain terminals; wherein the spacer support is positioned between the gate metal and the source or drain terminal.