GAAFET Drift Region Structure for Higher Operating Voltage
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Solution Overview
Problem
Existing semiconductor device structures, particularly GAAFET devices, face limitations in providing a diverse range of operating voltages, which restricts their application in high-power devices such as power amplifiers and RF amplifiers.
Innovation Solution
The semiconductor device structure includes a gate-all-around field-effect transistor (GAAFET) design with a depletion region and epitaxial layers that form a drift region, allowing for increased resistance to current flow at higher operating voltages, thereby expanding the operating voltage range to 1.8V-3.0V.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional GAAFET device structures are used, then device simplicity is maintained, but the operating voltage range is limited
Solution Approach 1:
The device structure is segmented into distinct functional regions including a first drift region with first doping concentration and a second drift region with second doping concentration. This segmentation allows each region to contribute differently to the overall device performance, enabling extended operating voltage range while maintaining manageable structural complexity through modular design
Solution Approach 2:
Different regions of the device are assigned different doping concentrations to optimize local electrical characteristics. The first drift region has a first doping concentration optimized for one aspect of voltage handling, while the second drift region has a second doping concentration optimized for another aspect, allowing the device to achieve diverse operating voltages through localized property variation
2Power
If higher operating voltages are implemented, then high-power application capability is improved, but current flow resistance increases causing potential damage
Solution Approach 1:
The device utilizes parameter changes in doping concentration across different drift regions to manage current flow at high voltages. By varying the doping concentration from the first drift region to the second drift region, the device creates an optimized electrical profile that enables high-power operation while controlling harmful current flow effects through precise parameter modulation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the suitability of semiconductor devices for high-power applications by providing increased resistance to current flow at higher voltages, thus preventing damage and ensuring proper operation.
Implementation Method 1
a gate-all-around field-effect transistor (GAAFET) design with a depletion region and epitaxial layers that form a drift region
Implementation Method 2
allowing for increased resistance to current flow at higher operating voltages
Data Source
AI summary
A semiconductor device, such as a gate-all-around field-effect transistor (GAAFET), that can provide advantages in terms of higher operating voltages. The semiconductor device includes a substrate with a p-type well, an n-type well, and a depletion region; an insulating layer disposed on the p-type well; a first epitaxial layer disposed on the insulating layer; a second epitaxial layer disposed on the p-type well, the n-type well, and/or the depletion region; and a gate formed around a channel and between the first epitaxial layer and the second epitaxial layer.