GaN HEMT Gate Width Ratio for Linearity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High-frequency semiconductor devices like HEMTs face challenges in simultaneously suppressing inter-modulation distortion and leakage current, which are difficult to manage together for high output and linearity.
Innovation Solution
A semiconductor device design featuring a nitride semiconductor layer with an n-type gallium nitride layer, a channel layer, an electron supply layer, and specific electrode configurations, where the gate electrode's width to distance ratio (L/d1) is set to 7 or more, optimizing the band structure to reduce high-order conductance components and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate electrode width to distance ratio (L/d1) is increased to suppress leakage current, then leakage current is reduced, but device complexity increases
Solution Approach 1:
The patent applies parameter changes by optimizing the gate electrode width to distance ratio (L/d1) to a specific value of 7 or more. This quantitative parameter adjustment simultaneously achieves leakage current suppression and maintains device simplicity, resolving the technical contradiction between reliability improvement and device complexity increase.
2Object-generated harmful factors
If the band structure is optimized to reduce high-order conductance components, then inter-modulation distortion is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating a specific n-type gallium nitride layer with controlled doping concentration positioned between the channel layer and the ground layer. This localized structural modification with specific electrical properties reduces high-order conductance components and inter-modulation distortion while maintaining overall manufacturing feasibility.
3Object-generated harmful factors
If the n-type gallium nitride layer doping concentration is optimized to reduce tertiary inter-modulation distortion, then linearity is improved, but leakage current suppression becomes more difficult
Solution Approach 1:
The patent introduces an n-type gallium nitride layer as an intermediary structure between the channel layer and the ground layer. This intermediate layer with specific doping concentration (1×10^18 to 1×10^19 atoms/cm³) acts as a mediator that simultaneously addresses both tertiary inter-modulation distortion reduction and leakage current suppression, resolving the contradiction between linearity improvement and reliability maintenance.
Data Source
AI summary
A semiconductor device of the invention includes an n-GaN layer provided on a substrate, a channel layer provided in contact with the upper surface of the n-GaN layer, an electron supply layer which is provided on the channel layer, and a gate electrode, a source electrode, and a drain electrode which are provided on the electron supply layer. The gate electrode is in contact with an underlying layer made from a nitride semiconductor. The semiconductor device has a ratio defined by the equation L/d1≧7, where L is the width of the gate electrode in contact with the underlying layer in a direction between the source electrode and drain electrode; and d1 is the distance between a surface of the n-type gallium nitride layer and a boundary between the gate electrode and the underlying layer.