GaN Semiconductor Interface Layer for Leakage Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
It has been difficult to form a high-quality insulating film on GaN semiconductors, leading to issues with interface electrical characteristics between the GaN semiconductor and the insulating film.
Innovation Solution
A semiconductor device is developed with a base layer of nitride semiconductor, an interface layer of gallium oxide with crystallinity, and a deposition layer with a wider band gap, where the interface layer contains both α-phase and β-phase Ga2O3, and is formed through oxidation processes such as dry oxidation or sputtering, optimizing thickness and surface roughness for improved electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thin insulating film is deposited on a GaN substrate, then the device structure is formed, but the interface electrical characteristics deteriorate due to difficulty in forming high-quality insulating film
Solution Approach 1:
An interface layer containing gallium oxide is introduced between the GaN semiconductor layer and the insulating film. This intermediary layer serves as a buffer that improves the interface electrical characteristics by reducing frequency dispersion and leakage current, while also facilitating the formation of high-quality insulating film on the GaN substrate.
Solution Approach 2:
The semiconductor device employs a composite structure consisting of multiple layers with different materials: GaN semiconductor layer, gallium oxide interface layer, and insulating film layer. Each layer contributes specific properties that collectively improve the overall device performance, particularly the interface electrical characteristics between the semiconductor and insulator.
2Reliability
If oxidation treatment is performed at high temperature to form gallium oxide, then the interface layer is formed, but the manufacturing process complexity increases
Solution Approach 1:
The oxidation process parameters are optimized to achieve effective gallium oxide formation at manageable temperatures. By controlling oxidation time, oxygen partial pressure, and temperature, the interface layer is formed with desired properties while keeping the manufacturing process relatively simple and compatible with existing semiconductor fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances interface electrical characteristics by reducing frequency dispersion and leakage current, making the semiconductor device suitable for power semiconductors.
Implementation Method 1
forming an interface layer containing gallium oxide by performing treatment on a surface of the base layer; the treatment includes oxidation
Implementation Method 2
forming a deposition layer having a wider band gap than the interface layer
Implementation Method 3
the treatment includes sputtering
Data Source
AI summary
A semiconductor device (100) includes a base layer (10), an interface layer (20), and a deposition layer (30). The base layer (10) includes a nitride semiconductor that contains gallium. The interface layer (20) is adjacent to the base layer (10). The interface layer (20) contains gallium oxide. The deposition layer (30) is adjacent to the interface layer (20). The deposition layer (30) has a wider band gap than the interface layer (20). The interface layer (20) preferably has crystallinity. The interface layer (20) preferably contains α-phase Ga2O3.