GaN Schottky Diode Segmented P-Block Field Redistribution
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Solution Overview
Problem
Schottky barrier diodes, particularly AlGaN/GaN Schottky barrier diodes, face issues with high reverse leakage current and poor anti-surge performance due to non-uniform electric field distribution, leading to avalanche breakdown.
Innovation Solution
The introduction of a P-type semiconductor sub-block structure between the anode and cathode, where the sub-blocks are spaced apart and angled, redistributes the surface electric field, preventing avalanche breakdown and enhancing breakdown voltage while providing multiple conduction channels to manage surges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional Schottky barrier diode structure is used, then the device achieves basic rectification function, but the reverse leakage current is high and anti-surge performance is poor
Solution Approach 1:
The P-type semiconductor layer is divided into multiple spaced-apart sub-blocks rather than a continuous layer. This segmentation creates multiple discrete conduction channels while maintaining spacing that prevents uncontrolled avalanche breakdown, thereby reducing reverse leakage current and improving anti-surge performance
Solution Approach 2:
The P-type semiconductor sub-blocks are positioned at specific locations between the anode and cathode to create localized conduction paths. This local quality approach allows the electric field to be redistributed in specific regions, preventing avalanche breakdown at critical points while maintaining overall device function
2Reliability
If the P-type semiconductor layer is made continuous, then conduction channels are provided, but avalanche breakdown occurs and breakdown voltage is reduced
Solution Approach 1:
The continuous P-type semiconductor layer is segmented into spaced-apart sub-blocks, which prevents the formation of continuous avalanche breakdown paths while still providing sufficient conduction channels for normal operation, thereby increasing the actual breakdown voltage
Solution Approach 2:
The spaced-apart P-type semiconductor sub-blocks act as intermediaries that redistribute the electric field in the depletion region. This intermediary structure prevents direct avalanche breakdown between anode and cathode by creating controlled field distribution, thus enhancing breakdown voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces reverse leakage current and increases actual breakdown voltage, improving the diode's performance by redistributing the electric field and creating additional conduction paths.
Implementation Method 1
The surface electric field of the heterojunction structure between the anode and the cathode is redistributed by the plurality of P-type semiconductor sub-blocks
Implementation Method 2
increase the actual breakdown voltage and reduce the reverse leakage current of the Schottky barrier diode
Implementation Method 3
provide multiple conduction channels between the anode and cathode to prevent surges
Data Source
AI summary
The present disclosure provides a Schottky barrier diode and a method for manufacturing same. The Schottky barrier diode includes a substrate, a heterojunction structure, a P-type semiconductor layer, an anode and a cathode. The P-type semiconductor layer includes a plurality of P-type semiconductor sub-blocks, and the plurality of P-type semiconductor sub-blocks between the anode and the cathode are spaced apart.