GaN Semiconductor Device with Semipolar Surface and Oxygen Control
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Solution Overview
Problem
The growth of gallium nitride semiconductor devices on semipolar or nonpolar surfaces poses challenges due to the incorporation of oxygen, which can impair device performance by affecting crystal quality and surface morphology, leading to issues with luminance efficiency and electrical performance.
Innovation Solution
A group III nitride semiconductor device with a gallium nitride based semiconductor region having an oxygen concentration between 5×10^16 cm^-3 and 5×10^18 cm^-3 is developed, featuring a semipolar or nonpolar surface morphology, with specific layers and structures to stabilize the surface and improve crystal quality, including a first and second conductive type gallium nitride based semiconductor layers and an active layer with controlled oxygen concentrations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If gallium nitride semiconductor is grown on semipolar or nonpolar primary surface, then surface morphology is stabilized, but oxygen concentration increases which impairs device performance
Solution Approach 1:
The patent applies parameter changes by precisely controlling oxygen concentration within the range of 5×10^16 to 5×10^18 cm^-3. This controlled parameter change allows the surface morphology stability benefit to be maintained while the harmful effect of excessive oxygen is prevented, resolving the technical contradiction between surface stability and oxygen contamination.
2Shape
If oxygen concentration is increased to stabilize surface formation, then surface morphology improves, but electrical performance and luminance efficiency deteriorate
Solution Approach 1:
The patent utilizes parameter changes by establishing a specific oxygen concentration window (5×10^16 to 5×10^18 cm^-3) that simultaneously achieves good surface morphology and maintains acceptable electrical performance. This precise parameter control resolves the contradiction between surface quality and device reliability.
3Manufacturing precision
If oxygen doping is used to facilitate surface formation, then crystal quality is improved, but carrier injection efficiency is reduced
Solution Approach 1:
The patent resolves this contradiction through parameter changes by controlling oxygen concentration within the optimal range of 5×10^16 to 5×10^18 cm^-3. This controlled doping level provides sufficient crystal quality improvement while preventing excessive oxygen accumulation that would harm carrier injection efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a semiconductor device with enhanced surface morphology, reduced piezoelectric fields, and improved carrier injection efficiency, leading to better luminance efficiency and electrical performance by controlling oxygen concentration and surface polarity.
Implementation Method 1
oxygen, which acts as a donor
Implementation Method 2
gallium nitride based semiconductor is grown on a semipolar or nonpolar primary surface
Data Source
AI summary
A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.