GaAs Fixed Voltage Circuit Merging RF Amplifier

Solution Overview

Problem

The integration of a fixed voltage generating circuit with an RF power amplifier fabricated using a GaAs process is hindered by the need for a separate CMOS process, leading to increased area consumption and reduced integration levels due to the incompatibility of CMOS components with the GaAs process.

Innovation Solution

A fixed voltage generating circuit is designed using a combination of resistors and transistors with specific resistance ratios and connections to a voltage source, allowing for the generation of a stable output voltage without requiring a CMOS process, thereby enabling integration within the GaAs process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a fixed voltage generating circuit is fabricated using a CMOS process, then the circuit can provide stable fixed voltage to the RF power amplifier, but the integration level is reduced and area consumption increases due to the need for a separate CMOS process

Engineering Contradiction:

Improvefixed voltage stabilityVSAvoidintegration level

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the fixed voltage generating circuit with the RF power amplifier by fabricating both using the same GaAs process. The P-type transistor (PMOS equivalent) is integrated into the GaAs HEMT structure, allowing the voltage generating circuit and power amplifier to be manufactured together in a single process flow, thereby achieving high integration level while maintaining reliable fixed voltage output

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The GaAs process is made universal by demonstrating its capability to perform both RF amplification and fixed voltage generation functions. The P-type transistor in GaAs technology serves dual purposes: it can operate as an active device in the voltage generating circuit while being fabricated using the same process as the HEMT power amplifier, eliminating the need for separate CMOS process

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If a fixed voltage generating circuit is fabricated using a CMOS process, then the circuit can provide stable fixed voltage to the RF power amplifier, but area consumption increases due to the additional CMOS process

Engineering Contradiction:

Improvefixed voltage stabilityVSAvoidarea consumption

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the fixed voltage generating circuit with the RF power amplifier by fabricating both using the same GaAs process. The P-type transistor (PMOS equivalent) is integrated into the GaAs HEMT structure, allowing the voltage generating circuit and power amplifier to be manufactured together in a single process flow, thereby achieving high integration level while maintaining reliable fixed voltage output

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The GaAs process is made universal by demonstrating its capability to perform both RF amplification and fixed voltage generation functions. The P-type transistor in GaAs technology serves dual purposes: it can operate as an active device in the voltage generating circuit while being fabricated using the same process as the HEMT power amplifier, eliminating the need for separate CMOS process

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS9088252B2Fixed voltage generating circuit

Publication Date: 2015.07.21 RICHWAVE TECH CORP

AI summary

A fixed voltage generating circuit includes a current mirror, a differential pair, and a resistor coupled to the current mirror. A node of the resistor is coupled to a voltage source. The differential pair includes two resistors coupled to the voltage source to enable the differential pair outputting a stable output voltage.