Gate-All-Around Semiconductor Device With Localized Dielectric Layers
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high reliability, high performance, and multiple functions while maintaining low power consumption, particularly in integrating complex and high-density structures for memory and logic functions.
Innovation Solution
A gate-all-around (GAA) semiconductor device is developed with alternatingly layered semiconductor patterns, where a gate electrode surrounds channel portions, and a semiconductor oxide with a lower dielectric constant than the gate insulating layer is used between the gate electrode and the substrate, reducing parasitic capacitance and improving electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high integration density and complex structures are used to achieve multiple functions and high performance, then device functionality and performance are improved, but parasitic capacitance and gate leakage current increase
Solution Approach 1:
The patent applies local quality by using different dielectric materials in different regions: a first dielectric material with lower dielectric constant is used in the region between the gate electrode and source/drain regions to reduce parasitic capacitance, while a second dielectric material with higher dielectric constant is used in the gate insulating layer to maintain gate control. This localized differentiation resolves the contradiction by optimizing each region for its specific function.
Solution Approach 2:
The patent employs composite materials by combining dielectric materials with different dielectric constants in a layered structure. The composite dielectric structure consists of a first dielectric layer (lower k-value) adjacent to source/drain regions and a second dielectric layer (higher k-value) forming the gate insulating layer, creating a composite system that simultaneously reduces parasitic capacitance and maintains effective gate control for high performance.
2Use of energy by moving object
If high integration density structures are implemented to reduce power consumption, then power efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the dielectric structure into distinct regions: a first dielectric region between the gate electrode and source/drain regions, and a second dielectric region forming the gate insulating layer. This segmentation allows each region to be optimized independently for its specific function while maintaining overall structural integrity, thereby managing complexity through functional decomposition.
Solution Approach 2:
The patent implements local quality by assigning different dielectric materials to different spatial regions based on their specific functional requirements. The first dielectric material with lower dielectric constant is placed where parasitic capacitance reduction is critical, while the second dielectric material with higher dielectric constant is used where gate control is paramount, optimizing power efficiency without uniformly increasing complexity throughout the entire device.
3Reliability
If gate-all-around structure is used to surround channel portions for better control, then transistor control is improved, but parasitic capacitance between gate and source/drain regions increases
Solution Approach 1:
The patent resolves this contradiction by applying local quality through spatial differentiation of dielectric materials. The gate-all-around structure provides superior transistor control by surrounding the channel, while simultaneously using a first dielectric material with lower dielectric constant in the regions adjacent to source and drain to minimize parasitic capacitance. This localized material optimization allows the gate to maintain close proximity to the channel for control while reducing capacitive coupling with source/drain regions.
Solution Approach 2:
The patent employs composite materials by creating a multi-layer dielectric structure where a first dielectric layer (lower k-value) is positioned between the gate electrode and source/drain regions, and a second dielectric layer (higher k-value) forms the gate insulating layer. This composite structure enables the gate-all-around configuration to provide excellent channel control while the lower-k first dielectric layer acts as a capacitance-reducing interface layer, resolving the trade-off between control and parasitic capacitance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The GAA semiconductor device enhances electric characteristics by reducing parasitic capacitance and gate leakage current, enabling improved performance and reliability while supporting high integration density and multiple functions.
Implementation Method 1
a semiconductor oxide with a lower dielectric constant than the gate insulating layer is used between the gate electrode and the substrate, reducing parasitic capacitance
Data Source
AI summary
A gate-all-around (GAA) semiconductor device can include a fin structure that includes alternatingly layered first and second semiconductor patterns. A source region can extend into the alternatingly layered first and second semiconductor patterns and a drain region can extend into the alternatingly layered first and second semiconductor patterns. A gate electrode can extend between the source region and the drain region and surround channel portions of the second semiconductor patterns between the source region and the drain region to define gaps between the source and drain regions. A semiconductor oxide can be on first side walls of the gap that face the source and drain regions and can be absent from at least one of second side walls of the gaps that face the second semiconductor patterns. A gate insulating layer can be on the first side walls of the gaps between the gate electrode and the semiconductor oxide.