Gadolinium Target Bonding with Titanium Backing Plate
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Solution Overview
Problem
The existing methods for producing gadolinium sputtering targets face challenges in achieving stable bonding between the target and backing plate, leading to issues like warpage, separation, and particle generation during sputtering, particularly due to the high reactivity of gadolinium with conventional backing materials like aluminum and copper, which form fragile intermetallic compounds.
Innovation Solution
A gadolinium sputtering target assembly using a titanium backing plate with solid-phase diffusion bonding under inert conditions at 350 to 650°C and 1000 to 2000 atm, along with isothermal forging of the gadolinium ingot, to enhance bonding strength and prevent warpage and particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If gadolinium is bonded to conventional backing materials like aluminum or copper, then bonding is achieved, but fragile intermetallic compounds form leading to warpage and separation
Solution Approach 1:
A titanium diffusion barrier layer is introduced as an intermediary between gadolinium and conventional backing materials (aluminum or copper). This titanium layer prevents direct contact between gadolinium and the backing material, avoiding the formation of fragile intermetallic compounds while still enabling effective thermal and electrical conduction for sputtering operations.
Solution Approach 2:
The backing plate structure is designed as a composite material system combining titanium diffusion barrier layer with conventional backing materials (aluminum or copper). This composite structure leverages the oxidation resistance and diffusion barrier properties of titanium while maintaining the thermal conductivity and mechanical strength of the conventional backing materials.
2Strength
If high reactivity of gadolinium is utilized for bonding, then bonding is achieved, but particle generation occurs during sputtering
Solution Approach 1:
The titanium diffusion barrier layer serves as a mediator that prevents direct bonding between gadolinium and the backing material, thereby eliminating the high reactivity-induced particle generation during sputtering while maintaining adequate bonding strength and thermal conduction.
3Productivity
If deposition rate is increased for productivity, then manufacturing efficiency improves, but sputtering process stability deteriorates
Solution Approach 1:
The titanium diffusion barrier layer enables stable sputtering process by preventing direct interaction between gadolinium and the backing material, allowing for optimized deposition rates without compromising process stability or generating particles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves the deposition rate, stabilizes the sputtering process, increases bonding strength, and reduces particle generation, resulting in a more uniform gadolinium film with reduced warpage and separation risks.
Implementation Method 1
solid-phase diffusion bonding under inert conditions at 350 to 650°C and 1000 to 2000 atm
Implementation Method 2
isothermal forging of the gadolinium ingot
Implementation Method 3
Sputtering is a method in which a DC voltage or a high-frequency voltage is applied between a substrate and a sputtering target while introducing inert gas (mainly Ar gas) into a vacuum, the ionized Ar collides with the sputtering target, and the sputtered target material is deposited onto the substrate
Data Source
AI summary
An assembly of a gadolinium target and a titanium backing plate, wherein the gadolinium target-titanium backing plate assembly has a solid-phase diffusion-bonded interface at a bonding interface between the gadolinium target and the titanium backing plate. An object of the present invention is to discover a backing plate that is suitable for the gadolinium sputtering target, explore the optimal bonding conditions, improve the deposition rate, stabilize the sputtering process, and prevent the occurrence of warpage and separation of the target material and the backing plate by increasing the bonding strength between the target material and the backing plate, as well as inhibit the generation of particles during sputtering.