Gallium Semiconductor Alignment Marks Using Ion-Implanted Metal
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Solution Overview
Problem
Trench-type alignment marks in semiconductor devices with gallium-based compound semiconductor layers face challenges in maintaining their depressed shape due to deformation during epitaxial layer formation and differences in film forming speed across crystal planes.
Innovation Solution
A method involving ion-implanting metal, such as magnesium, into the surface layer of a gallium-based compound semiconductor layer, followed by annealing to create a colored metal aggregation that serves as an alignment mark, which is more stable and recognizable throughout the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a trench-type alignment mark is formed in a gallium-based compound semiconductor layer, then alignment can be performed, but the depressed shape deforms during epitaxial layer formation due to temperature and film forming speed differences across crystal planes
Solution Approach 1:
The patent changes the physical and chemical parameters of the alignment mark by using ion-implanted metal atoms that aggregate during annealing. Instead of relying on a physical trench structure, the alignment mark is formed by metal atoms (such as magnesium) that are implanted into the semiconductor layer and then aggregated through thermal annealing, creating a stable colored region that does not deform during subsequent epitaxial growth
Solution Approach 2:
The patent replaces the mechanical trench structure with a chemical/markers-based system. Rather than using a physical depression in the semiconductor layer, the alignment mark is created through ion implantation and metal aggregation, which forms a stable colored region that can be detected optically without relying on mechanical structural integrity during high-temperature processing
2Measurement precision
If a trench-type alignment mark is used, then alignment is possible, but the mark becomes difficult to recognize after epitaxial layer formation
Solution Approach 1:
The patent utilizes color changes as the basis for the alignment mark. Metal atoms (such as magnesium) are ion-implanted into the gallium-based compound semiconductor layer and aggregated during annealing, creating a colored region that is visually distinct from the surrounding semiconductor material. This colored aggregation remains stable and recognizable even after subsequent epitaxial layer formation, allowing reliable optical detection and alignment
3Reliability
If ion-implanting and annealing are performed to form metal aggregation, then a stable alignment mark is created, but additional process steps are added
Solution Approach 1:
The patent combines the alignment mark formation process with the existing manufacturing workflow by integrating ion implantation and annealing steps that are compatible with standard semiconductor processing. The metal aggregation process is merged with the epitaxial growth sequence, where the ion-implanted metal atoms are aggregated during the annealing phase that precedes or accompanies epitaxial layer formation, thereby creating a stable alignment mark without requiring completely separate additional process equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal aggregation alignment mark effectively maintains its shape and recognition even after epitaxial layer formation, reducing defect formation and improving crystallinity, while allowing accurate image analysis and maintaining visibility through transparent epitaxial layers.
Implementation Method 1
ion-implanting a metal into a part of a surface layer portion of the non-element region of the gallium-based compound semiconductor layer
Implementation Method 2
annealing the gallium-based compound semiconductor layer
Data Source
AI summary
A method for manufacturing a semiconductor device, includes: forming an alignment mark in a non-element region of a gallium-based compound semiconductor layer; and, after the forming of the alignment mark, forming an element structure in an element region of the gallium-based compound semiconductor layer. The forming of the alignment mark further includes: ion-implanting a metal into a part of a surface layer portion of the non-element region of the gallium-based compound semiconductor layer; and annealing the gallium-based compound semiconductor layer.