Gallium Oxide Gate Structure With Deep P Layer for Field Relaxation
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Solution Overview
Problem
Current semiconductor devices using gallium oxide struggle with efficient electric field relaxation and high field strength, limiting their performance in power devices and other applications.
Innovation Solution
A semiconductor device design featuring a gate electrode with a deep p layer buried within the semiconductor layer, where the deep p layer is formed by a crystalline oxide semiconductor with a higher carrier concentration than the channel layer, achieving a breakdown field strength of 5 MV/cm or more.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If gallium oxide is used as the semiconductor material, then high voltage resistance and thermal resistance are achieved, but efficient electric field relaxation and high field strength are limited
Solution Approach 1:
The patent introduces a deep p layer with specific carrier concentration (1×10^17 cm^-3 to 1×10^20 cm^-3) positioned at a specific depth (0.5 μm to 5 μm from the surface) within the gallium oxide semiconductor layer. This local modification creates an electric field relaxation zone that efficiently relaxes high electric fields without compromising the overall high voltage resistance of the gallium oxide material.
Solution Approach 2:
The patent creates a composite structure by integrating a deep p layer (formed by crystalline oxide semiconductor) into the gallium oxide semiconductor layer. This composite structure combines the high voltage resistance properties of gallium oxide with the electric field relaxation capabilities of the doped p-type region, achieving both high strength and reliable electric field management.
2Ease of operation
If the gate electrode is buried deeper in the semiconductor layer, then better electric field control is achieved, but the breakdown field strength decreases
Solution Approach 1:
The patent pre-forms a deep p layer with optimized carrier concentration and depth positioning before forming the gate electrode. This preliminary preparation creates a favorable electric field distribution environment that enables effective electric field control while maintaining high breakdown field strength (5 MV/cm or more), avoiding the need for excessive gate burial depth.
Solution Approach 2:
The patent optimizes the carrier concentration of the deep p layer within a specific range (1×10^17 cm^-3 to 1×10^20 cm^-3) and positions it at an optimal depth (0.5 μm to 5 μm from the surface). These parameter optimizations enable effective electric field control while maintaining high breakdown field strength, resolving the contradiction between control efficiency and strength.
3Reliability
If the carrier concentration of the deep p layer is increased to improve electric field relaxation, then the breakdown field strength may be compromised
Solution Approach 1:
The patent precisely controls the carrier concentration of the deep p layer within the optimal range of 1×10^17 cm^-3 to 1×10^20 cm^-3. This parameter optimization ensures sufficient electric field relaxation through the p-type region while preventing excessive doping that would compromise the breakdown field strength, achieving a balance between relaxation efficiency and strength maintenance.
Solution Approach 2:
The patent creates a localized p-type region with specific carrier concentration properties at a specific depth within the gallium oxide layer. This local quality modification enables efficient electric field relaxation in the deep p layer region while preserving the high breakdown field strength properties of the overall semiconductor structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient electric field relaxation and enhanced semiconductor properties, including high voltage resistance and thermal resistance, making the device suitable for power devices and other applications.
Implementation Method 1
the semiconductor device of the present disclosure has an efficient electric field relaxation effect with respect to the crystalline oxide semiconductor layer
Implementation Method 2
a breakdown field strength of the deep p layer is 5 MV/cm or more
Data Source
AI summary
Provided is a semiconductor device, including: a gate electrode having at least a part buried in a semiconductor layer; a deep p layer having at least a part buried in the semiconductor layer to a same depth as a buried lower end portion of the gate electrode or a position deeper than the buried lower end portion; and a channel layer, wherein: the deep p layer is formed by a crystalline oxide semiconductor; and a carrier concentration of the deep p layer is higher than a carrier concentration of the channel layer.