Gallium Oxide Schottky Diode Passivation for Leakage and Breakdown
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Solution Overview
Problem
Schottky barrier diodes with gallium oxide-based semiconductors and SiO2 insulating films face challenges in balancing surface leakage and dielectric withstand voltage, where increasing film density damages the semiconductor layer and decreasing density compromises dielectric strength.
Innovation Solution
A Schottky barrier diode design featuring a dual-layer SiO2 insulating film with differing refractive indices, where a lower refractive index first layer minimizes semiconductor damage and a higher refractive index second layer enhances dielectric withstand voltage, combined with a guard ring to manage electric field concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the density of the insulating film is increased to suppress surface leakage, then surface leakage is reduced, but damage to the semiconductor layer increases during film formation
Solution Approach 1:
The insulating film is divided into multiple layers with different densities and refractive indices. The first layer has lower density and refractive index to minimize damage to the semiconductor layer, while the second layer has higher density and refractive index to effectively suppress surface leakage current.
Solution Approach 2:
Different portions of the insulating film have different properties: the first layer near the semiconductor layer has lower density to protect the semiconductor, while the second layer above it has higher density for better leakage suppression. This local differentiation of properties resolves the contradiction.
2Reliability
If the density of the insulating film is decreased to reduce damage to the semiconductor layer, then semiconductor layer integrity is maintained, but dielectric withstand voltage decreases
Solution Approach 1:
The insulating film is segmented into multiple layers where the first layer has lower density to protect the semiconductor layer, and the second layer has higher density to maintain dielectric withstand voltage.
Solution Approach 2:
The insulating film has different local properties: the first layer has lower density for semiconductor protection, while the second layer has higher density for dielectric strength. This spatial differentiation resolves the contradiction between protecting the semiconductor and maintaining dielectric strength.
3Device complexity
If a single-layer insulating film is used, then device complexity is reduced, but the ability to simultaneously suppress surface leakage and maintain low semiconductor damage is compromised
Solution Approach 1:
The insulating film is segmented into multiple layers with different properties to simultaneously achieve surface leakage suppression and minimize semiconductor damage, accepting increased structural complexity for improved performance.
Solution Approach 2:
The insulating film uses a composite structure with multiple layers having different refractive indices and densities, combining the benefits of low-density (semiconductor protection) and high-density (leakage suppression) properties in a single composite system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively suppresses surface leakage and significantly improves dielectric withstand voltage while minimizing damage to the semiconductor layer during film formation.
Implementation Method 1
a refractive index of the first layer is lower than a refractive index of the second layer
Implementation Method 2
a refractive index of the first layer is lower than a refractive index of the second layer
Implementation Method 3
an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer
Implementation Method 4
the n-type semiconductor layer further comprises a guard ring surrounding a junction with the anode electrode
Data Source
AI summary
A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer. The n-type semiconductor layer further includes a guard ring surrounding a junction with the anode electrode.