Gallium Oxide Doping Under Heat to Prevent Crystal Damage
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Solution Overview
Problem
The formation of n-type or p-type diffusion regions in gallium oxide-based semiconductor layers often results in crystal damage and oxygen vacancy defects due to high dopant concentrations and subsequent high-temperature annealing, which can lead to amorphization and reduced activation rates.
Innovation Solution
Ion-implanting dopants into a heated gallium oxide-based semiconductor layer followed by annealing under an oxygen atmosphere to suppress amorphization and oxygen leakage, thereby reducing crystal damage and maintaining crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high dopant concentration is used to form diffusion regions, then electrical conductivity is improved, but crystal damage and amorphization increase
Solution Approach 1:
The patent changes the temperature parameter during ion implantation, performing the process at elevated temperatures (e.g., 500-1500°C) rather than room temperature. This parameter change allows higher dopant concentrations to be incorporated while maintaining crystal structure, resolving the contradiction between electrical conductivity and crystal stability
Solution Approach 2:
The patent applies preliminary heating to the semiconductor layer before ion implantation. This preliminary thermal action prepares the crystal lattice to better accommodate incoming dopant ions, preventing amorphization even at high dopant concentrations while ensuring good electrical conductivity
2Stability of the object's composition
If high-temperature annealing is performed to recover crystal structure, then crystallinity is improved, but oxygen vacancy defects increase
Solution Approach 1:
The patent performs annealing in an oxygen-containing atmosphere (oxygen gas, air, or oxygen plasma) rather than in inert or vacuum conditions. This oxygen-rich environment prevents oxygen vacancy formation during high-temperature annealing, allowing crystal structure recovery without generating harmful oxygen defects
Solution Approach 2:
The patent uses oxygen plasma or oxygen gas atmosphere during annealing to actively supply oxygen to the semiconductor layer. This accelerated oxidation environment ensures that oxygen vacancies are filled or prevented during the high-temperature process, maintaining stoichiometry while recovering crystal structure
3Ease of manufacture
If ion implantation is performed at room temperature, then process simplicity is maintained, but amorphization occurs
Solution Approach 1:
The patent changes the temperature parameter from room temperature to elevated temperatures (500-1500°C) during ion implantation. This single parameter change prevents amorphization while maintaining process simplicity, as the heating can be integrated into existing semiconductor processing equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively forms diffusion regions with less crystal damage, even at high dopant concentrations, by preventing amorphization and oxygen vacancy defects, enhancing the semiconductor's structural integrity and conductive properties.
Implementation Method 1
ion-implanting a dopant into the gallium oxide-based semiconductor layer while heating the gallium oxide-based semiconductor layer
Implementation Method 2
annealing the gallium oxide-based semiconductor layer under an oxygen atmosphere after the ion-implanting
Implementation Method 3
annealing the gallium oxide-based semiconductor layer under an oxygen atmosphere after the ion-implanting
Implementation Method 4
ion-implanting a dopant into the gallium oxide-based semiconductor layer
Data Source
AI summary
A method for manufacturing a semiconductor device having a gallium oxide-based semiconductor layer includes: ion-implanting dopant into a gallium oxide-based semiconductor layer while heating the gallium oxide-based semiconductor layer; and annealing the gallium oxide-based semiconductor layer under an oxygen atmosphere, after the ion-implanting.