Al-Alloyed Gallium Oxide Ohmic Contacts via Selective Ion Implantation
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Solution Overview
Problem
Existing methods for forming ohmic contacts on aluminum-alloyed gallium oxide (AlxGa2−xO3) require complex epitaxial processes and do not allow selective doping, leading to increased surface roughness and limited control over dopant concentration, which is crucial for transistor device fabrication.
Innovation Solution
A method involving ion implantation of Group IV elements like silicon into AlxGa2−xO3, followed by annealing to activate the dopants, and depositing electrically conductive materials to form ohmic contacts, with controlled parameters such as implant dosage, energy, and anneal temperature to achieve optimal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If complex epitaxial processes are used to form ohmic contacts on aluminum-alloyed gallium oxide, then ohmic contacts can be formed, but the process complexity increases and selective doping is not enabled
Solution Approach 1:
The patent changes the doping method from complex epitaxial processes to ion implantation, altering the process parameters to achieve simpler, more controllable doping. By using ion implantation with controlled dosage and energy parameters, the patent achieves selective doping while reducing process complexity
Solution Approach 2:
The patent replaces the chemical epitaxial growth process with a physical ion implantation process. This substitution enables precise control over dopant concentration and spatial distribution through mechanical control of ion beam parameters, eliminating the need for complex epitaxial equipment and processes
2Quantity of substance
If conventional doping methods are used on aluminum-alloyed gallium oxide, then doping can be achieved, but surface roughness increases
Solution Approach 1:
The patent optimizes ion implantation parameters including dosage, energy, and temperature to achieve desired dopant concentration while minimizing surface damage. By carefully controlling these parameters, the patent maintains surface smoothness while achieving effective doping
Solution Approach 2:
The patent performs preliminary annealing treatments before final ohmic contact formation to repair implantation damage and smooth the surface. This preliminary action prevents surface roughness from propagating through subsequent processing steps
3Reliability
If dopant concentration is not precisely controlled, then doping process is simpler, but conductivity control for transistor devices is limited
Solution Approach 1:
The patent implements feedback control through measurement and characterization of dopant concentration at different stages. By monitoring the doping process and adjusting parameters based on measured results, the patent achieves precise conductivity control while maintaining process simplicity
Solution Approach 2:
The patent replaces indirect conductivity control methods with direct ion implantation control, where dopant concentration is precisely determined by implantation dosage and area. This mechanical control method provides direct, quantitative control over conductivity without complex intermediate steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of ohmic contacts with low contact resistance and sheet resistance, providing high activation efficiency and damage recovery, suitable for high-electric field applications.
Implementation Method 1
implanting a Group IV element as a donor impurity into the AlxGa2−xO3 crystal structure with an ion implantation process
Implementation Method 2
annealing the implanted AlxGa2−xO3 crystal structure to activate the Group IV element to form an electrically conductive region
Data Source
AI summary
A method for controlling a concentration of donors in an Al-alloyed gallium oxide crystal structure includes implanting a Group IV element as a donor impurity into the crystal structure with an ion implantation process and annealing the implanted crystal structure to activate the Group IV element to form an electrically conductive region. The method may further include depositing one or more electrically conductive materials on at least a portion of the implanted crystal structure to form an ohmic contact. Examples of semiconductor devices are also disclosed and include a layer of an Al-alloyed gallium oxide crystal structure, at least one region including the crystal structure implanted with a Group IV element as a donor impurity with an ion implantation process and annealed to activate the Group IV element, an ohmic contact including one or more electrically conductive materials deposited on the at least one region.