Gallium Oxide Film Sputtering Equipment for High-Speed Deposition
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Solution Overview
Problem
The existing molecular beam epitaxy (MBE) technology for forming gallium oxide films has a low film-forming speed, which limits the efficiency of semiconductor device manufacturing.
Innovation Solution
A sputtering equipment is designed to grow gallium oxide films by applying voltage to a gallium target and supplying oxygen elements, allowing for a high film-forming speed through the deposition of gallium atoms and oxidation by oxygen radicals, enabling the formation of gallium oxide films with controlled carrier densities by varying the amount and type of oxygen elements supplied.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If molecular beam epitaxy (MBE) is used to form gallium oxide films, then film quality can be maintained, but the film-forming speed is low
Solution Approach 1:
The patent changes the fundamental parameters of the film formation process by transitioning from MBE to sputtering method. This involves changing the deposition mechanism from molecular beam epitaxy to plasma-based sputtering, which enables higher film-forming speeds while maintaining film quality through controlled plasma conditions and oxygen supply parameters.
Solution Approach 2:
The patent replaces the mechanical MBE system with a sputtering system that uses plasma and ion bombardment. The sputtering method substitutes the molecular beam deposition mechanism with a plasma-enhanced physical vapor deposition process, achieving both high speed and quality through controlled ion-gas interactions.
2Productivity
If sputtering is used to increase film-forming speed, then productivity improves, but control of carrier density becomes more challenging
Solution Approach 1:
The patent implements feedback control by monitoring the relationship between oxygen supply amount and resulting carrier density. By establishing correlations between oxygen flow rates and carrier density outcomes, the system can adjust oxygen supply parameters in real-time to achieve precise carrier density control despite the high-speed sputtering process.
Solution Approach 2:
The patent employs dynamic control of oxygen supply during the sputtering process. By varying oxygen flow rates and timing during film formation, the system can dynamically adjust carrier density characteristics, enabling precise control even at high deposition speeds. The process adapts oxygen supply conditions based on real-time process state.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sputtering equipment achieves a high film-forming speed for gallium oxide films with low n-type carrier density and crystallinity, allowing for the production of semiconductor devices with precise carrier density control, and can also form p-type gallium oxide films by introducing nitrogen or zinc as dopants.
Implementation Method 1
voltage is applied to the gallium target, so as to cause the gallium target to release gallium elements. The gallium elements released from the gallium target are deposited on a surface of the substrate
Implementation Method 2
oxygen elements are supplied into the chamber by the oxygen element supplier. The oxygen elements are then captured into the film that is growing, and the gallium oxide film is grown on the surface of the substrate
Data Source
AI summary
A sputtering equipment configured to grow a gallium oxide film on a substrate is proposed, and the sputtering equipment may include: a chamber; a stage located in the chamber and configured to secure the substrate thereon; a gallium target located in the chamber and including gallium elements; a first power supply configured to apply voltage to the gallium target; and an oxygen element supplier configured to supply oxygen elements into the chamber.