Gallium-Treated Quantum Dots for Uniform Red Emission

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Solution Overview

Problem

Existing methods for manufacturing quantum dots face challenges in achieving uniform size and efficient light emission characteristics, leading to increased costs and reduced efficiency in display devices.

Innovation Solution

A method involving the formation of a core with silver (Ag) and indium (In), followed by purification with a gallium (Ga)-containing surface treatment solution, and subsequent shell formation, allows for precise control of peak emission wavelength and uniform size, enhancing the manufacturing process economy and light-emitting characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If existing methods are used to manufacture quantum dots, then production can be achieved, but uniform size control and light emission characteristics are difficult to achieve, leading to increased costs and reduced efficiency

Engineering Contradiction:
Improveuniform size controlVSAvoidmanufacturing process complexity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies preliminary action by performing surface treatment with gallium-containing solution and ligand exchange before shell formation. This pre-treatment prepares the core surface in advance to ensure uniform nucleation and growth of the shell, achieving precise size control while maintaining manufacturability. The core is pre-functionalized with ligands that control subsequent shell deposition uniformity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent utilizes parameter changes by systematically optimizing reaction temperature, precursor concentration, and treatment duration to achieve uniform quantum dot size. Specific parameters such as maintaining reaction temperature at 60-80°C during surface treatment and controlling the molar ratio of precursors enable precise size control. The method also controls peak emission wavelength by adjusting core size parameters during synthesis.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If existing methods are used to manufacture quantum dots, then production can be achieved, but light emission characteristics and emission efficiency are insufficient

Engineering Contradiction:
Improvelight emission characteristicsVSAvoidprocess steps
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the quantum dot synthesis into distinct sequential stages: core formation, surface treatment with gallium-containing solution, ligand exchange, and shell formation. Each stage is independently optimized to achieve specific objectives. This segmented approach ensures uniform size distribution and superior light emission characteristics by controlling nucleation, growth, and surface passification separately, while the overall process remains systematic and manufacturable.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent uses ligands as intermediary substances during the synthesis process. Ligands such as oleic acid and oleylamine mediate between the inorganic core and organic shell, controlling surface properties and enabling uniform shell deposition. These intermediary ligands improve light emission characteristics by passivating surface defects and enhancing quantum yield, while facilitating the integration between different material components.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Illumination intensity

If quantum dots with peak emission wavelength of 600 nm or more and FWHM of 50 nm or less are produced, then display quality improves, but manufacturing precision requirements increase

Engineering Contradiction:
Improveemission efficiencyVSAvoidsize uniformity
Core Design Contradiction:
Illumination intensityVSManufacturing precision

Solution Approach 1:

The patent applies feedback by using photoluminescence spectroscopy to monitor the peak emission wavelength and full width at half maximum during synthesis. This real-time optical characterization provides feedback on quantum dot size distribution and emission properties. Based on this feedback, synthesis parameters such as reaction temperature, precursor addition rate, and treatment duration are adjusted to maintain size uniformity and achieve the target emission characteristics of λ≥600 nm and FWHM≤50 nm.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method enables the production of quantum dots with a peak emission wavelength of 600 nm or more and a full width at half maximum of 50 nm or less, improving emission efficiency and display quality by ensuring uniform size and controlled emission characteristics.

Implementation Method 1

A quantum dot is a nano-sized semiconductor nanocrystal that exhibits a quantum confinement effect. By controlling size and composition of the nanocrystal, it may have different energy band gaps and thus emit light at one or more suitable emission wavelengths.

Methodology Applied
Scientific EffectQuantum confinement effect:

Implementation Method 2

purifying the core with a surface treatment solution including gallium (Ga)

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 3

forming a shell around (e.g., surrounding) the core by reacting a first precursor including gallium (Ga)

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 4

after the purifying of the core, a peak emission wavelength of a photoluminescence (PL) spectrum of the core may be about 600 nm or more

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS20260055317A1Method of manufacturing quantum dot, quantum dot, and electronic device including the same
Publication Date: 2026.02.26 SAMSUNG DISPLAY CO LTD
  • US20260055317A1 patent drawing
  • US20260055317A1 patent drawing
  • US20260055317A1 patent drawing

AI summary

A method of manufacturing a quantum dot includes forming a core including silver (Ag) and indium (In), purifying the core with a surface treatment solution including gallium (Ga) and forming a shell around (e.g., surrounding) the core by reacting a first precursor including gallium (Ga) with the core.