Galvanically-Isolated IC via Back-Side Etched Trench
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing systems that communicate between devices operating at different supply voltages face limitations in achieving sufficient voltage isolation and fast data transfer rates, often resulting in damage and restricted communication speeds due to arcing and limited protocol capabilities.
Innovation Solution
An integrated circuit with a through wafer trench filled with dielectric material separates regions operating at different supply voltages, enabling a non-galvanic communication channel through transformer-coupled, capacitor-coupled, or optically-coupled methods, allowing for higher bandwidth and faster data transfer while maintaining voltage isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage isolation measures are implemented between devices operating at different supply voltages, then device safety is improved, but communication speed deteriorates
Solution Approach 1:
The substrate is divided into multiple isolation regions separated by trenches filled with dielectric material. Each isolation region contains circuits operating at different voltage levels, enabling physical separation of voltage domains while maintaining integration on a single chip. This segmentation allows safe communication between different voltage domains through the isolation structure.
Solution Approach 2:
A dielectric material is introduced as an intermediary substance filling the trenches between isolation regions. This dielectric layer acts as an electrical insulator that prevents direct current flow between different voltage domains while allowing capacitive coupling for signal transmission. The intermediary enables communication without direct galvanic connection.
2Adaptability or versatility
If traditional communication protocols are used between devices at different voltages, then system compatibility is improved, but data transfer rate deteriorates
Solution Approach 1:
The patent replaces traditional electrical conduction-based communication with capacitive coupling through the dielectric layer. This substitution eliminates the need for galvanic connections and traditional voltage level shifting protocols, enabling faster signal transmission while maintaining isolation. The capacitive coupling mechanism allows direct high-speed data transfer without protocol overhead.
3Reliability
If isolation structures are added to prevent arcing between voltage domains, then reliability is improved, but device complexity deteriorates
Solution Approach 1:
The isolation structure combines multiple functions into a single integrated feature: the trench provides physical separation, the dielectric material provides electrical insulation, and the same structure serves as the coupling medium for signal transmission. This merging eliminates the need for separate isolation and communication structures, reducing overall device complexity while maintaining reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides effective voltage isolation and enables faster data transfer rates, potentially exceeding USB 2.0 and 3.0 speeds, while preventing damage from voltage differences, thus enhancing communication efficiency between devices with disparate voltage levels.
Implementation Method 1
A dielectric material is in the TWT
Implementation Method 2
non-galvanic communication channel is between the first and second circuits
Implementation Method 3
transformer-coupled, capacitor-coupled, or optically-coupled methods
Implementation Method 4
transformer-coupled, capacitor-coupled, or optically-coupled methods
Data Source
AI summary
An integrated circuit (IC) includes a substrate having a first surface and a second surface opposite the first surface. The substrate has a first region containing a first circuit and a second region containing a second circuit. The first circuit operates at a first supply voltage. The second circuit operates at a second supply voltage. The second supply voltage is higher than the first supply voltage. The IC includes a through wafer trench (TWT) extending from the first surface of the substrate to the second surface of the semiconductor substrate. The TWT separates the first region from the second region. A dielectric material is in the TWT. An interconnect region has layers of dielectric on the first surface of the substrate. The interconnect region is continuous over the first region, the second region, and the TWT. A non-galvanic communication channel is between the first and second circuits.