Galvanic Isolation Integrating Optical Link and Transformer on Single Substrate
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current galvanic isolation solutions require multiple individual semiconductor dies connected by wire bonds and are relatively slow, lacking the ability to integrate all system elements onto a single semiconductor substrate while providing high-speed data transmission and voltage isolation.
Innovation Solution
A galvanic isolation system integrated onto a single semiconductor substrate using a dielectric barrier, combining optical coupling with transformer technology, where optical emitters and receivers generate and detect light pulses across a dielectric isolation barrier, and a transformer structure transmits clock and power signals, enabling high-speed data communication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple individual semiconductor dies are used for galvanic isolation, then voltage isolation between different ground references is achieved, but the system size increases and integration complexity increases
Solution Approach 1:
The patent combines multiple galvanic isolation functions (optical emitter, optical receiver, transformer, and isolation barrier) into a single integrated semiconductor device. The transformer windings are formed directly on the semiconductor substrate with the optical components, eliminating the need for separate dies and wire bonds. This merging approach maintains voltage isolation reliability while reducing integration complexity.
Solution Approach 2:
The semiconductor substrate serves multiple functions simultaneously: it provides the structural base for the transformer, supports the optical emitter and receiver, and incorporates the dielectric isolation barrier. This multi-functionality allows a single component to replace what would traditionally require multiple separate components and assembly steps.
2Reliability
If multiple individual semiconductor dies connected by wire bonds are used, then galvanic isolation is provided, but the data transmission speed is relatively slow
Solution Approach 1:
The patent integrates the optical emitter, optical receiver, and transformer into a single semiconductor device, allowing for optimized signal paths and reduced transmission delays. The direct integration enables faster data transmission compared to wire-bonded multi-die solutions while maintaining galvanic isolation through the dielectric barrier and optical coupling.
3Device complexity
If all system elements are integrated onto a single semiconductor substrate, then device size is reduced and integration is simplified, but manufacturing precision requirements increase
Solution Approach 1:
The transformer windings are formed on the semiconductor substrate before the optical emitter and receiver are integrated. This preliminary formation of the magnetic path structure allows subsequent optical components to be aligned to predetermined locations, reducing the overall alignment precision requirements compared to integrating all components simultaneously.
4Reliability
If a dielectric galvanic isolation barrier is used, then voltage isolation between different ground references is achieved, but the barrier must be wide which increases device area
Solution Approach 1:
The dielectric isolation barrier is integrated with the transformer structure, with the barrier forming part of the transformer's magnetic path. This merging allows the isolation barrier to serve dual purposes: providing voltage isolation and contributing to the magnetic flux path, thereby reducing the overall device area compared to having a separate wide isolation barrier.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for high-speed data transmission across a galvanic isolation barrier while integrating all necessary elements onto a single substrate, enhancing system efficiency and reducing size and complexity.
Implementation Method 1
one or more optical emitters formed in the semiconductor substrate as part of the first electrical system and that generates light pulses
Implementation Method 2
utilizing a dielectric galvanic isolation barrier and optical coupling to transmit data at high baud rates
Implementation Method 3
a transformer structure formed on the semiconductor substrate and adapted to transmit the clock signal and the power signal from the first electrical system to the second electrical system
Implementation Method 4
a dielectric galvanic isolation barrier formed in the semiconductor substrate between the first electrical system and the second electrical system
Implementation Method 5
one or more optical receivers formed in the semiconductor substrate as part of the second electrical system and adapted to receive light pulses transmitted through the dielectric galvanic isolation barrier
Data Source
AI summary
Methods and structures provide galvanic isolation for electrical systems using a wide oxide filled trench, and that allows power across the system divide with a transformer, and that transmits data at a high baud rate using an optical link. The system solution allows the integration of all of these elements onto a single semiconductor substrate in contrast to currently available galvanic isolation systems that require multiple individual silicon die that are connected by wire bonds and are relatively slow.