Galvanic Plating Current Distribution Grid for Uniform Deposition

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Solution Overview

Problem

Galvanic plating for depositing metallic layers on large areas, such as in extended wafer level packaging, often results in inhomogeneous layers with significant thickness variations and poor growth in the center, due to metallic layer growth starting from edge portions.

Innovation Solution

A current distribution grid is used to facilitate a distributed growth of metallic material during galvanic plating by providing a network of conductive rails and vias that allow for even deposition across the surface, ensuring a homogeneous metallic layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If galvanic plating is used to deposit metallic layers on large areas, then the metallic layer can cover the entire surface, but the layer becomes inhomogeneous with significant thickness variations

Engineering Contradiction:
Improvecoverage areaVSAvoidthickness uniformity
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The patent divides the large-area substrate into multiple smaller plating zones by introducing a current distribution grid. This grid segments the continuous large area into discrete regions, each with its own local current distribution characteristics, enabling more uniform thickness control across the entire large area while maintaining comprehensive coverage

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by using a current distribution grid that provides location-dependent current density control. Different regions of the large substrate receive optimized local current distribution through the grid structure, ensuring each local area achieves uniform plating while the entire large area is covered

Inventive Principle:
Principle #3Local quality

2Area of stationary object

If galvanic plating is used on large areas, then complete coverage is achieved, but growth starts from edge portions resulting in poor center growth

Engineering Contradiction:
Improvecoverage areaVSAvoiddeposition quality
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The current distribution grid segments the plating process into multiple independent current pathways distributed across the substrate. This segmentation allows simultaneous or near-simultaneous nucleation and growth throughout the entire area, preventing the edge-first growth pattern that causes poor center deposition quality

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements equipotentiality through the current distribution grid that creates multiple equipotential zones across the substrate. This ensures more uniform electric field distribution and current density throughout the entire large area, enabling reliable and high-quality deposition across all regions including the center, rather than just at the edges

Inventive Principle:
Principle #12Equipotentiality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method ensures a homogeneous and evenly distributed metallic layer with reduced thickness variations, improving the quality of the metallic layer deposition on large areas.

Implementation Method 1

depositing a metallic layer onto the substrate by galvanic plating

Methodology Applied
Scientific EffectGalvanic plating: Electroplating

Data Source

PatentUS10229885B2Method of galvanic plating assisted by a current distribution layer
Publication Date: 2019.03.12 INFINEON TECHNOLOGIES AG
  • US10229885B2 patent drawing
  • US10229885B2 patent drawing
  • US10229885B2 patent drawing

AI summary

The method comprises providing a plurality of electronic devices, embedding the electronic devices in an encapsulation layer, forming vias into the encapsulation layer, the vias extending from a main face of the encapsulation layer to the electronic devices, and depositing a metallic layer onto the encapsulation layer including the vias by galvanic plating, the method further comprising providing a current distribution layer for effecting a distributed growth of the metallic material during the galvanic plating.